Scaling hetero-epitaxy from layers to three-dimensional crystals CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ... Science 335 (6074), 1330-1334, 2012 | 207 | 2012 |
Faceting of equilibrium and metastable nanostructures: a phase-field model of surface diffusion tackling realistic shapes M Salvalaglio, R Backofen, R Bergamaschini, F Montalenti, A Voigt Crystal Growth & Design 15 (6), 2787-2794, 2015 | 88 | 2015 |
Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays R Bergamaschini, F Isa, CV Falub, P Niedermann, E Müller, G Isella, ... Surface science reports 68 (3-4), 390-417, 2013 | 53 | 2013 |
Continuum modelling of semiconductor heteroepitaxy: an applied perspective R Bergamaschini, M Salvalaglio, R Backofen, A Voigt, F Montalenti Advances in Physics: X 1 (3), 331-367, 2016 | 44 | 2016 |
Ge crystals on Si show their light F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ... Physical Review Applied 1 (4), 044005, 2014 | 43 | 2014 |
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ... Physical Review Materials 2 (9), 093404, 2018 | 42 | 2018 |
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires M Albani, S Assali, MA Verheijen, S Koelling, R Bergamaschini, F Pezzoli, ... Nanoscale 10 (15), 7250-7256, 2018 | 41 | 2018 |
Anomalous smoothing preceding island formation during growth on patterned substrates R Bergamaschini, J Tersoff, Y Tu, JJ Zhang, G Bauer, F Montalenti Physical review letters 109 (15), 156101, 2012 | 39 | 2012 |
Strain engineering in Ge/GeSn core/shell nanowires S Assali, M Albani, R Bergamaschini, MA Verheijen, A Li, S Kölling, ... Applied Physics Letters 115 (11), 2019 | 31 | 2019 |
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ... ACS applied materials & interfaces 7 (34), 19219-19225, 2015 | 31 | 2015 |
Competition between kinetics and thermodynamics during the growth of faceted crystal by phase field modeling M Albani, R Bergamaschini, M Salvalaglio, A Voigt, L Miglio, F Montalenti physica status solidi (b) 256 (7), 1800518, 2019 | 30 | 2019 |
Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ... ACS nano 14 (2), 2445-2455, 2020 | 26 | 2020 |
Dislocation-Free SiGe/Si Heterostructures F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ... Crystals 8 (6), 257, 2018 | 25 | 2018 |
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film M Salvalaglio, R Bergamaschini, R Backofen, A Voigt, F Montalenti, ... Applied Surface Science 391, 33-38, 2017 | 25 | 2017 |
Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films F Rovaris, R Bergamaschini, F Montalenti Physical Review B 94 (20), 205304, 2016 | 22 | 2016 |
3D heteroepitaxy of mismatched semiconductors on silicon CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ... Thin Solid Films 557, 42-49, 2014 | 22 | 2014 |
Dynamics of pit filling in heteroepitaxy via phase-field simulations M Albani, R Bergamaschini, F Montalenti Physical Review B 94 (7), 075303, 2016 | 21 | 2016 |
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si (001) R Bergamaschini, M Brehm, M Grydlik, T Fromherz, G Bauer, F Montalenti Nanotechnology 22 (28), 285704, 2011 | 19 | 2011 |
Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ... ECS Transactions 64 (6), 631, 2014 | 16 | 2014 |
Doubling the mobility of InAs/InGaAs selective area grown nanowires DV Beznasyuk, S Martí-Sánchez, JH Kang, R Tanta, M Rajpalke, ... Physical Review Materials 6 (3), 034602, 2022 | 14* | 2022 |