Yuji Yamamoto
Yuji Yamamoto
Email verificata su ihp-microelectronics.com
Citata da
Citata da
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ...
2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010
A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps
H Rücker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ...
IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010
Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD
Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack
Solid-State Electronics 60 (1), 2-6, 2011
Novel collector design for high-speed SiGe: C HBTs
B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ...
Digest. International Electron Devices Meeting,, 775-778, 2002
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process
G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 013513, 2013
SiGe BiCMOS technology with 3.0 ps gate delay
H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ...
2007 IEEE International Electron Devices Meeting, 651-654, 2007
Graphene grown on Ge (0 0 1) from atomic source
G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ...
Carbon 75, 104-112, 2014
Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology
D Knoll, S Lischke, L Zimmermann, B Heinemann, D Micusik, ...
Optical Fiber Communication Conference, Th4C. 4, 2014
A complementary BiCMOS technology with high speed npn and pnp SiGe: C HBTs
B Heinemann, R Barth, D Bolze, J Drews, P Formanek, O Fursenko, ...
IEEE International Electron Devices Meeting 2003, 5.2. 1-5.2. 4, 2003
Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates
M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
A low-parasitic collector construction for high-speed SiGe: C HBTs
B Heinemann, R Barth, D Bolze, J Drews, P Formanek, T Grabolla, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module
D Knoll, KE Ehwald, B Heinemann, A Fox, K Blum, H Rucker, ...
Digest. International Electron Devices Meeting,, 783-786, 2002
SiGe HBT module with 2.5 ps gate delay
A Fox, B Heinemann, R Barth, D Bolze, J Drews, U Haak, D Knoll, B Kuck, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Low threading dislocation Ge on Si by combining deposition and etching
Y Yamamoto, G Kozlowski, P Zaumseil, B Tillack
Thin Solid Films 520 (8), 3216-3221, 2012
Atomic layer processing for doping of SiGe
B Tillack, Y Yamamoto, D Bolze, B Heinemann, H Rücker, D Knoll, ...
Thin Solid Films 508 (1-2), 279-283, 2006
BiCMOS silicon photonics platform
L Zimmermann, D Knoll, M Kroh, S Lischke, D Petousi, G Winzer, ...
Optical Fiber Communication Conference, Th4E. 5, 2015
Molecular beam growth of micrometer-size graphene on mica
G Lippert, J Dabrowski, Y Yamamoto, F Herziger, J Maultzsch, ...
Carbon 52, 40-48, 2013
Fully coherent growth of Ge on free-standing Si (001) nanomesas
F Montalenti, M Salvalaglio, A Marzegalli, P Zaumseil, G Capellini, ...
Physical Review B 89 (1), 014101, 2014
SiGe: C HBT architecture with epitaxial external base
A Fox, B Heinemann, R Barth, S Marschmeyer, C Wipf, Y Yamamoto
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 70-73, 2011
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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