| Semiconductor to metal transition in degenerate ZnO: Al films and the impact on its carrier scattering mechanisms and bandgap for OLED applications JK Jha, R Santos-Ortiz, J Du, ND Shepherd Journal of Materials Science: Materials in Electronics 25, 1492-1498, 2014 | 23 | 2014 |
| The influence of MoOx gap states on hole injection from aluminum doped zinc oxide with nanoscale MoOx surface layer anodes for organic light emitting diodes JK Jha, R Santos-Ortiz, J Du, ND Shepherd Journal of Applied Physics 118 (6), 2015 | 16 | 2015 |
| Mechanisms of AZO workfunction tuning for anode use in OLEDs: Surface dipole manipulation with plasma treatments versus nanoscale WOx and VOx interfacial layers JK Jha, W Sun, J Du, ND Shepherd Journal of Applied Physics 121 (18), 2017 | 13 | 2017 |
| Effect of surface adsorption and non-stoichiometry on the workfunction of ZnO surfaces: A first principles study W Sun, Y Li, JK Jha, ND Shepherd, J Du Journal of Applied Physics 117 (16), 2015 | 13 | 2015 |
| Interface structures of ZnO/MoO3 and their effect on workfunction of ZnO surfaces from first principles calculations W Sun, JK Jha, ND Shepherd, J Du Computational Materials Science 141, 162-169, 2018 | 12 | 2018 |
| Defect structure and chemical bonding of p-type ZnO: Sb thin films prepared by pulsed laser deposition R Santos-Ortiz, JK Jha, W Sun, G Nyandoto, J Du, ND Shepherd Semiconductor Science and Technology 29 (11), 115019, 2014 | 11 | 2014 |
| Analysis of the structural evolution of the SEI layer in FeF2 thin-film lithium-ion batteries upon cycling using HRTEM and EELS R Santos-Ortiz, T Rojhirunsakool, JK Jha, S Al Khateeb, R Banerjee, ... Solid State Ionics 303, 103-112, 2017 | 10 | 2017 |
| A photoelectron study of annealing induced changes to workfunction and majority carrier type in pulsed laser deposited few layer WS2 films UP Rathod, JK Jha, AA Voevodin, ND Shepherd Journal of Materials Science: Materials in Electronics 29, 20051-20056, 2018 | 7 | 2018 |
| Effect of deposition energy on the microstructure and phase purity of pulsed laser deposited iron fluoride thin films R Santos-Ortiz, JK Jha, T Rojhirunsakool, N Dendge, R Banerjee, ... Applied Physics A 120, 863-868, 2015 | 6 | 2015 |
| A critical review of process parameters of fused deposition modeling JK Jha, A Narasimhulu J. Material Sci. Mech. Eng 5 (3), 138-141, 2018 | 5 | 2018 |
| Electro-optical performance of molybdenum oxide modified aluminum doped zinc oxide anodes in organic light emitting diodes: A comparison to indium tin oxide JK Jha, W Sun, R Santos-Ortiz, J Du, ND Shepherd Materials Express 6 (3), 289-294, 2016 | 4 | 2016 |
| Halogen treatment for NMOS contact resistance improvement S Chouksey, G Dewey, N Haratipour, M Lu, JK Jha, JT Kavalieros, ... US Patent 11,923,290, 2024 | 3 | 2024 |
| Dual contact process with selective deposition K Cook, AS Murthy, G Dewey, N Haratipour, C Choi, JK Jha, S Mukherjee US Patent App. 17/033,373, 2022 | 1 | 2022 |
| Integrated circuit structures including a titanium silicide material DS Lavric, GA Glass, TT Troeger, S Vishwanath, JK Jha, JF Richards, ... US Patent App. 16/912,118, 2021 | 1 | 2021 |
| Surface modification of aluminum doped zinc oxide (AZO) anodes with CFx plasma treatment and nanoscale WOx layers for enhanced electro-optical performance in OLEDs JK Jha, R Santos-Ortiz, W Sun, J Du, N and Shepherd TechConnect Briefs 2016, 294-296, 2016 | 1* | 2016 |
| Integrated circuit devices with contacts using nitridized molybdenum JK Jha, J Mueller, N Haratipour, GW Dewey, C Choi, JT Kavalieros, ... US Patent App. 17/935,647, 2024 | | 2024 |
| Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers G Dewey, S Chouksey, N Haratipour, C Jezewski, JK Jha, IV Karpov, ... US Patent App. 17/856,982, 2024 | | 2024 |
| Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layers G Dewey, S Chouksey, N Haratipour, C Jezewski, JK Jha, IV Karpov, ... US Patent App. 17/856,979, 2024 | | 2024 |
| Capping source and drain regions of transistors to prevent diffusion of dopants during fabrication N Haratipour, G Dewey, N Zelick, S Chouksey, IC Tung, ASEN GUPTA, ... US Patent App. 17/856,620, 2024 | | 2024 |
| Source and drain refractory metal cap N Haratipour, G Dewey, N Zelick, S Chouksey, IC Tung, ASEN GUPTA, ... US Patent App. 17/856,206, 2024 | | 2024 |
