| Miniaturized tunable terahertz antenna based on graphene T Zhou, Z Cheng, H Zhang, M Le Berre, L Militaru, F Calmon Microwave and Optical Technology Letters 56 (8), 1792-1794, 2014 | 64 | 2014 |
| Time-dependent many-particle simulation for resonant tunneling diodes: interpretation of an analytical small-signal equivalent circuit FL Traversa, E Buccafurri, A Alarcon, G Albareda, R Clerc, F Calmon, ... IEEE transactions on electron devices 58 (7), 2104-2112, 2011 | 33 | 2011 |
| 3D Integration of CMOS image sensor with coprocessor using TSV last and micro-bumps technologies P Coudrain, D Henry, A Berthelot, J Charbonnier, S Verrun, R Franiatte, ... 2013 IEEE 63rd Electronic Components and Technology Conference, 674-682, 2013 | 25 | 2013 |
| A simple way for substrate noise modeling in mixed-signal ICs O Valorge, C Andrei, F Calmon, J Verdier, C Gontrand, P Dautriche IEEE Transactions on Circuits and Systems I: Regular Papers 53 (10), 2167-2177, 2006 | 24 | 2006 |
| Integration of SPAD in 28nm FDSOI CMOS technology TC De Albuquerque, F Calmon, R Clerc, P Pittet, Y Benhammou, ... 2018 48th European Solid-State Device Research Conference (ESSDERC), 82-85, 2018 | 21 | 2018 |
| Participation à l’étude du comportement électrothermique des IGBT (Transistors Bipolaires à Grille Isolée F Calmon Lyon, INSA, 1995 | 18 | 1995 |
| Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering K El Hajjam, N Baboux, F Calmon, A Souifi, O Poncelet, LA Francis, ... Journal of Vacuum Science & Technology A 32 (1), 2014 | 16 | 2014 |
| Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering K El Hajjam, N Baboux, F Calmon, A Souifi, O Poncelet, LA Francis, ... Journal of Vacuum Science & Technology A 32 (1), 2014 | 16 | 2014 |
| Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology MM Vignetti, F Calmon, P Lesieur, A Savoy-Navarro Solid-State Electronics 128, 163-171, 2017 | 14 | 2017 |
| Tunnel junction engineering for optimized metallic single-electron transistor KG El Hajjam, MA Bounouar, N Baboux, S Ecoffey, M Guilmain, E Puyoo, ... IEEE Transactions on Electron Devices 62 (9), 2998-3003, 2015 | 14 | 2015 |
| Modelling of through silicon via and devices electromagnetic coupling M Abouelatta-Ebrahim, R Dahmani, O Valorge, F Calmon, C Gontrand Microelectronics Journal 42 (2), 316-324, 2011 | 14 | 2011 |
| Predictive high frequency effects of substrate coupling in 3D integrated circuits stacking E Eid, T Lacrevaz, S de Rivaz, C Bermond, B Fléchet, F Calmon, ... 2009 IEEE International Conference on 3D System Integration, 1-6, 2009 | 14 | 2009 |
| Estimation of the IGBT silicon temperature during short-circuit condition in order to determine the failure mode F Calmon, JP Chante, A Sénès, B Reymond EPE journal 6 (2), 25-32, 1996 | 14 | 1996 |
| Analysis of the IGBT dv/dt in hard switching mode F Calmon, JP Chante, B Reymond, A Senes European Conference on Power Electronics and Applications 1, 1.234-1.239, 1995 | 14 | 1995 |
| Thermal behaviour of PT and NPT IGBT F Calmon, S Lefebvre, JP Chante, D Ligot, B Reymond 1994 Fifth International Conference on Power Electronics and Variable-Speed …, 1994 | 14 | 1994 |
| Room temperature double gate single electron transistor based standard cell library MA Bounouar, A Beaumont, K El Hajjam, F Calmon, D Drouin Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012 | 12 | 2012 |
| Mixed-signal IC design guide to enhance substrate noise immunity in bulk silicon technology O Valorge, F Calmon, C Andrei, C Gontrand, P Dautriche Analog Integrated Circuits and Signal Processing 63, 185-196, 2010 | 12 | 2010 |
| Impact of low-frequency substrate disturbances on a 4.5 GHz VCO F Calmon, C Andrei, O Valorge, JCN Perez, J Verdier, C Gontrand Microelectronics journal 37 (10), 1119-1127, 2006 | 12 | 2006 |
| Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR D Issartel, S Gao, P Pittet, R Cellier, D Golanski, A Cathelin, F Calmon Solid-State Electronics 191, 108297, 2022 | 11 | 2022 |
| Dark count rate in single-photon avalanche diodes: Characterization and modeling study M Sicre, M Agnew, C Buj, J Coignus, D Golanski, R Helleboid, B Mamdy, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 11 | 2021 |
