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Wolfgang M. Klesse
Wolfgang M. Klesse
Email verificata su ihp-microelectronics.com
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Citata da
Citata da
Anno
A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium
G Scappucci, G Capellini, B Johnston, WM Klesse, JA Miwa, MY Simmons
Nano Letters 11 (6), 2272-2279, 2011
722011
New avenues to an old material: controlled nanoscale doping of germanium
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanoscale 5 (7), 2600-2615, 2013
442013
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 022522, 2019
422019
Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers
G Scappucci, G Capellini, WM Klesse, MY Simmons
Nanotechnology 22 (37), 375203, 2011
372011
Preparation of the Ge (001) surface towards fabrication of atomic-scale germanium devices
WM Klesse, G Scappucci, G Capellini, MY Simmons
Nanotechnology 22 (14), 145604, 2011
362011
Decoupling of graphene from Ni (111) via formation of an interfacial NiO layer
Y Dedkov, W Klesse, A Becker, F Spth, C Papp, E Voloshina
Carbon 121, 10-16, 2017
312017
Compositional dependence of the band-gap of Ge1−xySixSny alloys
T Wendav, IA Fischer, M Montanari, MH Zoellner, W Klesse, G Capellini, ...
Applied Physics Letters 108 (24), 242104, 2016
272016
Phosphorus molecules on Ge (001): a playground for controlled n-doping of germanium at high densities
G Mattoni, WM Klesse, G Capellini, MY Simmons, G Scappucci
ACS nano 7 (12), 11310-11316, 2013
272013
Bottom-up assembly of metallic germanium
G Scappucci, WM Klesse, LRA Yeoh, DJ Carter, O Warschkow, NA Marks, ...
Scientific reports 5 (1), 1-7, 2015
262015
Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport
G Scappucci, WM Klesse, AR Hamilton, G Capellini, DL Jaeger, ...
Nano letters 12 (9), 4953-4959, 2012
232012
Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers
E Calandrini, T Venanzi, F Appugliese, M Badioli, V Giliberti, ...
Applied Physics Letters 109 (12), 121104, 2016
202016
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
WM Klesse, G Scappucci, G Capellini, JM Hartmann, MY Simmons
Applied Physics Letters 102 (15), 151103, 2013
192013
Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Physical Review Letters 112 (23), 236602, 2014
182014
-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level
G Scappucci, O Warschkow, G Capellini, WM Klesse, DR McKenzie, ...
Physical Review Letters 109 (7), 076101, 2012
172012
Dual-temperature encapsulation of phosphorus in germanium δ‐layers toward ultra-shallow junctions
G Scappucci, G Capellini, WM Klesse, MY Simmons
Journal of Crystal Growth 316 (1), 81-84, 2011
162011
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si (001): A comprehensive analysis
CL Manganelli, M Virgilio, O Skibitzki, M Salvalaglio, D Spirito, P Zaumseil, ...
Journal of Raman Spectroscopy 51 (6), 989-996, 2020
92020
Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
N Taoka, G Capellini, N von den Driesch, D Buca, P Zaumseil, ...
Applied Physics Express 9 (3), 031201, 2016
82016
Photoluminescence from GeSn nano-heterostructures
V Schlykow, P Zaumseil, MA Schubert, O Skibitzki, Y Yamamoto, ...
Nanotechnology 29 (41), 415702, 2018
72018
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si: P and Ge: P δ-layers
S Shamim, S Mahapatra, G Scappucci, WM Klesse, MY Simmons, ...
Scientific Reports 7 (1), 1-9, 2017
72017
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si (001)
V Schlykow, WM Klesse, G Niu, N Taoka, Y Yamamoto, O Skibitzki, ...
Applied Physics Letters 109 (20), 202102, 2016
72016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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