John C. Bean

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Leonard FeldmanProfessor of Physics and Materials ScienceVerified email at rutgers.edu
J. Murray GibsonProfessor of Mechanical EngineeringVerified email at eng.famu.fsu.edu
T.P. PearsallEPICVerified email at ieee.org
Raymond T. TungBrooklyn College, Bell LabsVerified email at brooklyn.cuny.edu
Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk
Joe CampbellProfessor Electrical and Computer Engineering, University of VirginiaVerified email at virginia.edu
Ian RobinsonBrookhaven LabVerified email at ucl.ac.uk
Abbas OurmazdDistinguished Professor of PhysicsVerified email at uwm.edu
Serge LuryiDistinguished Professor of Electrical Engineering, Stony Brook UniversityVerified email at stonybrook.edu
Max G. LagallyMaterials Science and Engineering, University of Wisconsin-MadisonVerified email at wisc.edu
eric p kvamProfessor, Materials Engineering, Purdue UniversityVerified email at purdue.edu
James M. TourProfessor, Rice University, Department of Chemistry, Materials Science and NanoEngineering, andVerified email at rice.edu
Thomas VanderveldeTufts UniversityVerified email at ece.tufts.edu
Nadine Gergel-HackettMary Baldwin UniversityVerified email at marybaldwin.edu
George K CellerProfessor of Materials Science, Rutgers UniversityVerified email at rci.rutgers.edu
Anders OlssonPearl LaboratoriesVerified email at pearllaboratories.com
Mark S HybertsenGroup Leader, Theory and Computation, Center for Functional Nanomaterials, Brookhaven National LaboratoryVerified email at bnl.gov
Rudolf TrompIBM T.J. Watson Research Center / Leiden UniversityVerified email at us.ibm.com
Mircea R. StanVirginia Microelectronics Consortium (VMEC) Professor, University of VirginiaVerified email at virginia.edu
Jerry TersoffIBMVerified email at us.ibm.com

John C. Bean

Stanford University OR Bell Labs OR University of Virginia OR WeCanFigureThisOut.org

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Semiconductor nanostructures MBE SiGe Sustainable Energy Education


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Calculation of critical layer thickness versus lattice mismatch for Ge_xSi_1−x/Si strained‐layer heterostructures R People, JC Bean Applied Physics Letters 47 (3), 322-324, 1985	2403	1985
Ge_xSi_1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984	1033	1984
Band alignments of coherently strained Ge_xSi_1−x/Si heterostructures on <001> Ge_ySi_1−y substrates R People, JC Bean Applied physics letters 48 (8), 538-540, 1986	445	1986
Measurement of the band gap of Ge_xSi_1−x/Si strained‐layer heterostructures DV Lang, R People, JC Bean, AM Sergent Applied Physics Letters 47 (12), 1333-1335, 1985	439	1985
Modulation doping in Ge_xSi_1−x/Si strained layer heterostructures R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ... Applied Physics Letters 45 (11), 1231-1233, 1984	388	1984
Silicon-based semiconductor heterostructures: column IV bandgap engineering JC Bean Proceedings of the IEEE 80 (4), 571-587, 1992	358	1992
Pseudomorphic growth of Ge_xSi₁₋_x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984	330	1984
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors DH Auston, AM Johnson, PR Smith, JC Bean Applied Physics Letters 37 (4), 371-373, 1980	325	1980
Observation of order-disorder transitions in strained-semiconductor systems A Ourmazd, JC Bean Physical review letters 55 (7), 765, 1985	316	1985
Ge_xSi_1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986	299	1986
Raman scattering from Ge_xSi_1−x/Si strained‐layer superlattices F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson Applied physics letters 45 (10), 1138-1140, 1984	297	1984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff Physical Review B 53 (24), 16334, 1996	292	1996
Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson Thin Solid Films 93 (1-2), 77-90, 1982	279	1982
Misfit dislocations in lattice-mismatched epitaxial films R Hull, JC Bean Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992	263	1992
Growth of single‐crystal CoSi₂ on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982	239	1982
Dependence of residual damage on temperature during Ar⁺ sputter cleaning of silicon JC Bean, GE Becker, PM Petroff, TE Seidel Journal of Applied Physics 48 (3), 907-913, 1977	239	1977
New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984	229	1984
Stability of semiconductor strained‐layer superlattices R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson Applied physics letters 48 (1), 56-58, 1986	204	1986
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	192	1989
Silicon/metal silicide heterostructures grown by molecular beam epitaxy JC Bean, JM Poate Applied Physics Letters 37 (7), 643-646, 1980	192	1980

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