John C. Bean
John C. Bean
Stanford University OR Bell Labs OR University of Virginia OR
No verified email - Homepage
Cited by
Cited by
Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
R People, JC Bean
Applied Physics Letters 47 (3), 322-324, 1985
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984
Band alignments of coherently strained GexSi1−x/Si heterostructures on <001> GeySi1−y substrates
R People, JC Bean
Applied physics letters 48 (8), 538-540, 1986
Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
DV Lang, R People, JC Bean, AM Sergent
Applied Physics Letters 47 (12), 1333-1335, 1985
Modulation doping in GexSi1−x/Si strained layer heterostructures
R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ...
Applied Physics Letters 45 (11), 1231-1233, 1984
Silicon-based semiconductor heterostructures: column IV bandgap engineering
JC Bean
Proceedings of the IEEE 80 (4), 571-587, 1992
Pseudomorphic growth of GexSi1x on silicon by molecular beam epitaxy
JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch
Applied Physics Letters 44 (1), 102-104, 1984
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors
DH Auston, AM Johnson, PR Smith, JC Bean
Applied Physics Letters 37 (4), 371-373, 1980
Observation of order-disorder transitions in strained-semiconductor systems
A Ourmazd, JC Bean
Physical review letters 55 (7), 765, 1985
GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm
H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi
Applied Physics Letters 48 (15), 963-965, 1986
Raman scattering from GexSi1−x/Si strained‐layer superlattices
F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson
Applied physics letters 45 (10), 1138-1140, 1984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff
Physical Review B 53 (24), 16334, 1996
Epitaxial silicides
RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson
Thin Solid Films 93 (1-2), 77-90, 1982
Misfit dislocations in lattice-mismatched epitaxial films
R Hull, JC Bean
Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992
Growth of single‐crystal CoSi2 on Si(111)
RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson
Applied Physics Letters 40 (8), 684-686, 1982
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon
JC Bean, GE Becker, PM Petroff, TE Seidel
Journal of Applied Physics 48 (3), 907-913, 1977
New infrared detector on a silicon chip
S Luryi, A Kastalsky, JC Bean
IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984
Stability of semiconductor strained‐layer superlattices
R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson
Applied physics letters 48 (1), 56-58, 1986
Dislocation nucleation near the critical thickness in GeSi/Si strained layers
DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean
Philosophical Magazine A 59 (5), 1059-1073, 1989
Silicon/metal silicide heterostructures grown by molecular beam epitaxy
JC Bean, JM Poate
Applied Physics Letters 37 (7), 643-646, 1980
The system can't perform the operation now. Try again later.
Articles 1–20