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Temperature dependence of the thermo-optic coefficient in crystalline silicon between room temperature and 550 K at the wavelength of 1523 nm
G Cocorullo, FG Della Corte, I Rendina
Applied physics letters 74 (22), 3338-3340, 1999
2271999
Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm
FG Della Corte, G Cocorullo, M Iodice, I Rendina
Applied Physics Letters 77 (11), 1614-1616, 2000
1352000
Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition
G Cocorullo, FG Della Corte, I Rendina, C Minarini, A Rubino, E Terzini
Optics Letters 21 (24), 2002-2004, 1996
1341996
Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics
G Cocorullo, FG Della Corte, R De Rosa, I Rendina, A Rubino, E Terzini
IEEE Journal of selected topics in quantum electronics 4 (6), 997-1002, 1998
1071998
Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models
FG Della Corte, M Esposito Montefusco, L Moretti, I Rendina, G Cocorullo
Journal of Applied Physics 88 (12), 7115-7119, 2000
1002000
Design considerations for radio frequency energy harvesting devices
D Pavone, A Buonanno, M D'Urso, F Della Corte
Progress In Electromagnetics Research B 45, 19-35, 2012
832012
High-performance temperature sensor based on 4H-SiC Schottky diodes
S Rao, G Pangallo, F Pezzimenti, FG Della Corte
IEEE Electron Device Letters 36 (7), 720-722, 2015
662015
Temperature dependence of the thermo-optic coefficient of lithium niobate, from 300 to 515 K in the visible and infrared regions
L Moretti, M Iodice, FG Della Corte, I Rendina
Journal of applied physics 98 (3), 036101, 2005
642005
Thermo-optic effect exploitation in silicon microstructures
G Cocorullo, FG Della Corte, I Rendina, PM Sarro
Sensors and Actuators A: Physical 71 (1-2), 19-26, 1998
551998
An indoor ultrasonic system for autonomous 3-D positioning
R Carotenuto, M Merenda, D Iero, FG Della Corte
IEEE Transactions on Instrumentation and Measurement 68 (7), 2507-2518, 2018
532018
Use of amorphous silicon for active photonic devices
FG Della Corte, S Rao
IEEE Transactions on Electron Devices 60 (5), 1495-1505, 2013
512013
An analytical model of the forward I–V characteristics of 4H-SiC pin diodes valid for a wide range of temperature and current
S Bellone, FG Della Corte, LF Albanese, F Pezzimenti
IEEE transactions on power electronics 26 (10), 2835-2843, 2011
492011
4H-SiC pin diode as highly linear temperature sensor
S Rao, G Pangallo, FG Della Corte
IEEE Transactions on Electron Devices 63 (1), 414-418, 2015
462015
Study of the thermo-optic effect in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide between 300 and 500 K at 1.55 μm
FG Della Corte, ME Montefusco, L Moretti, I Rendina, A Rubino
Applied Physics Letters 79 (2), 168-170, 2001
452001
85–440 K temperature sensor based on a 4H-SiC Schottky diode
S Rao, L Di Benedetto, G Pangallo, A Rubino, S Bellone, FG Della Corte
IEEE Sensors Journal 16 (17), 6537-6542, 2016
442016
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon pin waveguiding device
FG Della Corte, S Rao, G Coppola, C Summonte
Optics express 19 (4), 2941-2951, 2011
422011
New possibilities for efficient silicon integrated electro-optical modulators
G Cocorullo, F Della Corte, I Rendina, A Cutolo
Optics communications 86 (2), 228-235, 1991
411991
Silicon Fabry–Perot filter for WDM systems channels monitoring
M Iodice, G Cocorullo, FG Della Corte, I Rendina
Optics communications 183 (5-6), 415-418, 2000
402000
Electro-optically induced absorption in α-Si: H/α-SiCN waveguiding multistacks
FG Della Corte, S Rao, MA Nigro, F Suriano, C Summonte
Optics Express 16 (10), 7540-7550, 2008
392008
Numerical simulation study of a low breakdown voltage 4H-SiC MOSFET for photovoltaic module-level applications
FG Della Corte, G De Martino, F Pezzimenti, G Adinolfi, G Graditi
IEEE Transactions on Electron Devices 65 (8), 3352-3360, 2018
382018
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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