Donghyi Koh
Titolo
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Anno
ETB-QW InAs MOSFET with scaled body for improved electrostatics
TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ...
2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012
382012
Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
362013
Investigation and review of the thermal, mechanical, electrical, optical, and structural properties of atomic layer deposited high-k dielectrics: Beryllium oxide, aluminumá…
JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ...
ECS Journal of Solid State Science and Technology 6 (10), N189, 2017
332017
Nuclear reaction analysis for H, Li, Be, B, C, N, O and F with an RBS check
WA Lanford, M Parenti, BJ Nordell, MM Paquette, AN Caruso, ...
Nuclear Instruments and Methods in Physics Research Section B: Beamá…, 2016
292016
L-nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2Gate-Stack
TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ...
IEEE Electron Device Letters 36 (3), 223-225, 2015
282015
Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications
D Koh, JH Yum, SK Banerjee, TW Hudnall, C Bielawski, WA Lanford, ...
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2014
202014
A novel technique exploiting C–V, G–V and I–V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs
G Sereni, L Larcher, L Vandelli, D Veksler, T Kim, D Koh, G Bersuker
Microelectronic Engineering 147, 281-284, 2015
82015
Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
CS Shin, WK Park, SH Shin, YD Cho, DH Ko, TW Kim, DH Koh, HM Kwon, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technicalá…, 2014
62014
In0. 7Ga0. 3As quantum well MOSFETs with Al2O3/HfO2 toward subthreshold swing of∼ 60 mV/dec
TW Kim, D Koh, H Kwon, CS Shin, WK Park, SH Shin, Y Cho, DH Ko, ...
Applied Physics Express 7 (7), 074201, 2014
52014
Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 183509, 2015
42015
Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
D Koh, HM Kwon, TW Kim, DH Kim, TW Hudnall, CW Bielawski, ...
Applied Physics Letters 104 (16), 163502, 2014
32014
Nanoscale doping of compound semiconductors by solid phase dopant diffusion
J Ahn, H Chou, D Koh, T Kim, A Roy, J Song, SK Banerjee
Applied Physics Letters 108 (12), 122107, 2016
22016
X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces
D Koh, SK Banerjee, J Brockman, M Kuhn, SW King
Diamond and Related Materials 101, 107647, 2020
12020
Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides
D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ...
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2019
12019
Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices
D Koh, JH Yum, T Akyol, DA Ferrer, M Lei, TW Hudnall, MC Downer, ...
2012 International Conference on Indium Phosphide and Related Materials, 163-166, 2012
12012
Erratum:“Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides”[J. Vac. Sci. Technol. B 37, 041206 (2019)]
D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ...
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2020
2020
Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides (vol 37, 041206, 2019)
D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ...
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 (3), 2020
2020
Erratum: Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Berylliumá…
JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ...
ECS Journal of Solid State Science and Technology 7 (5), X3, 2018
2018
Advanced III-V MOSFET
D Koh
2016
L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
D Koh
Applied Physics Letters 104 (16), 2014
2014
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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