Randall Feenstra
Randall Feenstra
Professor of Physics, Carnegie Mellon University
Email verificata su cmu.edu - Home page
Titolo
Citata da
Citata da
Anno
Tunneling spectroscopy of the Si (111) 2× 1 surface
RM Feenstra, JA Stroscio, AP Fein
Surface science 181 (1-2), 295-306, 1987
7971987
Atom-selective imaging of the GaAs (110) surface
RM Feenstra, JA Stroscio, J Tersoff, AP Fein
Physical Review Letters 58 (12), 1192, 1987
7931987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 57 (20), 2579, 1986
7781986
Tunneling spectroscopy of the GaAs (110) surface
RM Feenstra, JA Stroscio
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
5181987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra
Physical Review B 50 (7), 4561, 1994
4951994
Reconstructions of the GaN (000 1) surface
AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup
Physical review letters 79 (20), 3934, 1997
4251997
Structure of GaN (0001): The laterally contracted Ga bilayer model
JE Northrup, J Neugebauer, RM Feenstra, AR Smith
Physical Review B 61 (15), 9932, 2000
3992000
Determination of wurtzite GaN lattice polarity based on surface reconstruction
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
3831998
Adatom kinetics on and below the surface: The existence of a new diffusion channel
J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ...
Physical review letters 90 (5), 056101, 2003
3292003
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1
RM Feenstra, WA Thompson, AP Fein
Physical review letters 56 (6), 608, 1986
3141986
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
2901998
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy
P Mårtensson, RM Feenstra
Physical Review B 39 (11), 7744, 1989
2881989
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 58 (16), 1668, 1987
2641987
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve
Journal of Electronic Materials 27 (4), 308-312, 1998
2611998
Inversion of wurtzite GaN (0001) by exposure to magnesium
V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ...
Applied Physics Letters 75 (6), 808-810, 1999
2541999
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
2511988
Fermi-level pinning at the Sb/GaAs (110) surface studied by scanning tunneling spectroscopy
RM Feenstra, P Mårtensson
Physical review letters 61 (4), 447, 1988
2431988
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
RM Feenstra, JM Woodall, GD Pettit
Physical review letters 71 (8), 1176, 1993
2401993
Influence of misfit dislocations on the surface morphology of Si1−xGex films
MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu
Applied physics letters 66 (6), 724-726, 1995
2301995
Scanning tunneling spectroscopy
RM Feenstra
Surface science 299, 965-979, 1994
2261994
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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