Stephan Abermann
Stephan Abermann
Affiliazione sconosciuta
Email verificata su ait.ac.at
Titolo
Citata da
Citata da
Anno
Non-vacuum processed next generation thin film photovoltaics: towards marketable efficiency and production of CZTS based solar cells
S Abermann
Solar Energy 94, 37-70, 2013
1522013
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $
J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ...
IEEE transactions on electron devices 55 (3), 937-941, 2008
1152008
MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs
S Abermann, G Pozzovivo, J Kuzmik, G Strasser, D Pogany, JF Carlin, ...
Semiconductor Science and Technology 22 (12), 1272, 2007
882007
Photovoltaic properties of thin film heterojunctions with cupric oxide absorber
T Dimopoulos, A Peić, P Mllner, M Neuschitzer, R Resel, S Abermann, ...
Journal of Renewable and Sustainable Energy 5 (1), 011205, 2013
622013
Atomic layer deposition of high- dielectrics on germanium reaching 0.5 nm equivalent oxide thickness
S Abermann, O Bethge, C Henkel, E Bertagnolli
Applied Physics Letters 94 (26), 262904, 2009
382009
Atomic layer-deposited platinum in high-k/metal gate stacks
C Henkel, S Abermann, O Bethge, E Bertagnolli
Semiconductor science and technology 24 (12), 125013, 2009
322009
Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric
O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ...
Applied surface science 258 (8), 3444-3449, 2012
312012
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ...
Electronics letters 45 (11), 570-572, 2009
252009
Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium
S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli
Applied Surface Science 256 (16), 5031-5034, 2010
242010
ALD grown bilayer junction of ZnO: Al and tunnel oxide barrier for SIS solar cell
O Bethge, M Nobile, S Abermann, M Glaser, E Bertagnolli
Solar energy materials and solar cells 117, 178-182, 2013
232013
Pt-assisted oxidation of (100)-Ge/high- interfaces and improvement of their electrical quality
C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli
Applied Physics Letters 97 (15), 152904, 2010
232010
Process temperature dependent high frequency capacitance-voltage response of /germanium capacitors
O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ...
Applied Physics Letters 96 (5), 052902, 2010
222010
Ion bombardment induced morphology modifications on self-organized semiconductor surfaces
C Hofer, S Abermann, C Teichert, T Bobek, H Kurz, K Lyutovich, E Kasper
Nuclear Instruments and Methods in Physics Research Section B: Beam…, 2004
222004
Layer-by-layer assembly of titania nanoparticles based ionic networks
B Basnar, M Litschauer, S Abermann, E Bertagnolli, G Strasser, ...
Chemical Communications 47 1 (2011), 361-363, 2011
192011
Ge p-MOSFETs With Scaled ALDGate Dielectrics
C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ...
IEEE transactions on electron devices 57 (12), 3295-3302, 2010
192010
Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell
T Dimopoulos, A Peić, S Abermann, M Postl, EJW List-Kratochvil, R Resel
EPJ Photovoltaics 5, 50301, 2014
152014
Effect of AZO substrates on self-seeded electrochemical growth of vertically aligned ZnO nanorod arrays and their optical properties
A Peić, T Dimopoulos, R Resel, S Abermann, M Postl, EJW List, H Brckl
Journal of nanomaterials 2012, 2012
152012
Reduction of the PtGe/Ge electron Schottky-barrier height by rapid thermal diffusion of phosphorous dopants
C Henkel, S Abermann, O Bethge, G Pozzovivo, S Puchner, H Hutter, ...
Journal of The Electrochemical Society 157 (8), H815, 2010
152010
Interface states and trapping effects in Al2O3-and ZrO2/InAlN/AlN/GaN metal–oxide–semiconductor heterostructures
M Ťapajna, J Kuzmk, K Čičo, D Pogany, G Pozzovivo, G Strasser, ...
Japanese Journal of Applied Physics 48 (9R), 090201, 2009
142009
Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices
O Bethge, S Abermann, C Henkel, E Bertagnolli
Thin Solid Films 517 (18), 5543-5547, 2009
132009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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