Non-vacuum processed next generation thin film photovoltaics: towards marketable efficiency and production of CZTS based solar cells S Abermann
Solar Energy 94, 37-70, 2013
188 2013 Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr $\hbox {O} _ {\bm 2} $ or Hf $\hbox {O} _ {\bm 2} $ J Kuzmik, G Pozzovivo, S Abermann, JF Carlin, M Gonschorek, E Feltin, ...
IEEE Transactions on Electron Devices 55 (3), 937-941, 2008
120 2008 MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs S Abermann, G Pozzovivo, J Kuzmik, G Strasser, D Pogany, JF Carlin, ...
Semiconductor Science and Technology 22 (12), 1272, 2007
99 2007 Photovoltaic properties of thin film heterojunctions with cupric oxide absorber T Dimopoulos, A Peić, P Müllner, M Neuschitzer, R Resel, S Abermann, ...
Journal of Renewable and Sustainable Energy 5 (1), 2013
75 2013 Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness S Abermann, O Bethge, C Henkel, E Bertagnolli
Applied Physics Letters 94 (26), 2009
41 2009 Atomic layer-deposited platinum in high-k/metal gate stacks C Henkel, S Abermann, O Bethge, E Bertagnolli
Semiconductor science and technology 24 (12), 125013, 2009
38 2009 Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric O Bethge, C Henkel, S Abermann, G Pozzovivo, M Stoeger-Pollach, ...
Applied surface science 258 (8), 3444-3449, 2012
32 2012 Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics S Abermann, G Pozzovivo, J Kuzmik, C Ostermaier, C Henkel, O Bethge, ...
Electronics letters 45 (11), 570-572, 2009
27 2009 ALD grown bilayer junction of ZnO: Al and tunnel oxide barrier for SIS solar cell O Bethge, M Nobile, S Abermann, M Glaser, E Bertagnolli
Solar energy materials and solar cells 117, 178-182, 2013
26 2013 Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium S Abermann, C Henkel, O Bethge, G Pozzovivo, P Klang, E Bertagnolli
Applied Surface Science 256 (16), 5031-5034, 2010
25 2010 Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors O Bethge, S Abermann, C Henkel, CJ Straif, H Hutter, J Smoliner, ...
Applied Physics Letters 96 (5), 2010
24 2010 Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality C Henkel, O Bethge, S Abermann, S Puchner, H Hutter, E Bertagnolli
Applied Physics Letters 97 (15), 2010
23 2010 Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell T Dimopoulos, A Peić, S Abermann, M Postl, EJW List-Kratochvil, R Resel
EPJ Photovoltaics 5, 50301, 2014
22 2014 Ge p-MOSFETs With Scaled ALD C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, M Reiche, ...
IEEE transactions on electron devices 57 (12), 3295-3302, 2010
21 2010 Ion bombardment induced morphology modifications on self-organized semiconductor surfaces C Hofer, S Abermann, C Teichert, T Bobek, H Kurz, K Lyutovich, E Kasper
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
21 2004 Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics C Henkel, S Abermann, O Bethge, G Pozzovivo, P Klang, ...
Microelectronic engineering 88 (3), 262-267, 2011
19 2011 Layer-by-layer assembly of titania nanoparticles based ionic networks B Basnar, M Litschauer, S Abermann, E Bertagnolli, G Strasser, ...
Chemical Communications 47 1 (2011), 361-363, 2011
19 2011 Effect of AZO substrates on self-seeded electrochemical growth of vertically aligned ZnO nanorod arrays and their optical properties A Peić, T Dimopoulos, R Resel, S Abermann, M Postl, EJW List, H Brückl
Journal of nanomaterials 2012, 107-107, 2012
17 2012 Reduction of the PtGe/Ge electron Schottky-barrier height by rapid thermal diffusion of phosphorous dopants C Henkel, S Abermann, O Bethge, G Pozzovivo, S Puchner, H Hutter, ...
Journal of The Electrochemical Society 157 (8), H815, 2010
16 2010 Interface states and trapping effects in Al2O3-and ZrO2/InAlN/AlN/GaN metal–oxide–semiconductor heterostructures M Ťapajna, J Kuzmík, K Čičo, D Pogany, G Pozzovivo, G Strasser, ...
Japanese Journal of Applied Physics 48 (9R), 090201, 2009
16 2009 
Ole BethgeTU WienEmail verificata su tuwien.ac.at
