Jaroslaw Dabrowski
Jaroslaw Dabrowski
Email verificata su ihp-microelectronics.com
Citata da
Citata da
Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2?
J Dabrowski, M Scheffler
Physical review letters 60 (21), 2183, 1988
Silicon surfaces and formation of interfaces: basic science in the industrial world
J Dabrowski
World Scientific, 2000
Atomic structure of clean Si (113) surfaces: Theory and experiment
J Dabrowski, HJ Mssig, G Wolff
Physical review letters 73 (12), 1660, 1994
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
Isolated arsenic-antisite defect in GaAs and the properties of EL2
J. Dabrowski, M. Scheffler
Physical Review B 40, 10391, 1989
Vertical Graphene Base Transistor
W Mehr, J Dabrowski, G Lippert, YH Xie, MC Lemme, M Ostling, G Lupina
Electron Device Letters 33, 691, 2012
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
A Fissel, J Dabrowski, HJ Osten
Journal of applied physics 91 (11), 8986-8991, 2002
Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors
M Scheffler, J Dabrowski
Philosophical Magazine A 58 (1), 107-121, 1988
Pulse-induced low-power resistive switching in metal-insulator-metal diodes for nonvolatile memory applications
C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 114103, 2009
Applications in Industry
A Dabrowski
Elsevier, 1998
Energy and width of hyperon in nuclear matter
J Dabrowski, J Rożynek
Physical Review C 23 (4), 1706, 1981
Titanium-added praseodymium silicate high- layers on Si(001)
T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 022902, 2005
Isospin dependence of the single-particle potential of the hyperon in nuclear matter
J Dabrowski
Physical Review C 60 (2), 025205, 1999
Direct graphene growth on insulator
G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina
physica status solidi (b) 248 (11), 2619-2622, 2011
Mechanism of dopant segregation to SiO 2/Si (001) interfaces
J Dabrowski, HJ Mssig, V Zavodinsky, R Baierle, MJ Caldas
Physical Review B 65 (24), 245305, 2002
Anion-antisite-like defects in III-V compounds
MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
Graphene grown on Ge (001) from atomic source
G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, F Herziger, J ...
Carbon 75 (104-112), 2014
Calculation of the surface stress anisotropy for the buckled Si(001)(12) and p(22) surfaces
J Dabrowski, E Pehlke, M Scheffler
Physical Review B 49 (7), 4790, 1994
Spin and spin-isospin symmetry energy of nuclear matter
J Dabrowski, P Haensel
Physical Review C 7 (3), 916, 1973
Pseudopotential study of PrO2 and HfO2 in fluorite phase
J Dabrowski, V Zavodinsky, A Fleszar
Microelectronics Reliability 41 (7), 1093-1096, 2001
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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