John Muth
Citata da
Citata da
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A Suresh, JF Muth
Applied Physics Letters 92 (3), 033502, 2008
3D printing of free standing liquid metal microstructures
C Ladd, JH So, J Muth, MD Dickey
Advanced Materials 25 (36), 5081-5085, 2013
Optical and structural properties of epitaxial alloys
AK Sharma, J Narayan, JF Muth, CW Teng, C Jin, A Kvit, RM Kolbas, ...
Applied Physics Letters 75 (21), 3327-3329, 1999
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan
Journal of Applied Physics 85 (11), 7884-7887, 1999
Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1− xMnxO films
A Tiwari, C Jin, A Kvit, D Kumar, JF Muth, J Narayan
Solid State Communications 121 (6-7), 371-374, 2002
Refractive indices and absorption coefficients of alloys
CW Teng, JF Muth, Ü Özgür, MJ Bergmann, HO Everitt, AK Sharma, C Jin, ...
Applied Physics Letters 76 (8), 979-981, 2000
Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes
HC Casey Jr, J Muth, S Krishnankutty, JM Zavada
Applied physics letters 68 (20), 2867-2869, 1996
Shallow acceptor complexes in p-type ZnO
JG Reynolds, CL Reynolds Jr, A Mohanta, JF Muth, JE Rowe, HO Everitt, ...
Applied Physics Letters 102 (15), 152114, 2013
Visible-blind GaN Schottky barrier detectors grown on Si (111)
A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ...
Applied Physics Letters 72 (5), 551-553, 1998
Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
A Suresh, P Wellenius, A Dhawan, J Muth
Applied physics letters 90 (12), 123512, 2007
Accurate dependence of gallium nitride thermal conductivity on dislocation density
C Mion, JF Muth, EA Preble, D Hanser
Applied physics letters 89 (9), 092123, 2006
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
JF Muth, JD Brown, MAL Johnson, Z Yu, RM Kolbas, JW Cook, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
Transparent, high mobility InGaZnO thin films deposited by PLD
A Suresh, P Gollakota, P Wellenius, A Dhawan, JF Muth
Thin Solid Films 516 (7), 1326-1329, 2008
Novel cubic ZnxMg1− xO epitaxial heterostructures on Si (100) substrates
J Narayan, AK Sharma, A Kvit, C Jin, JF Muth, OW Holland
Solid state communications 121 (1), 9-13, 2001
Modular observation crawler and sensing instrument and method for operating same
E Grant, JF Muth, JS Cottle, BE Dessent, JA Cox
US Patent 6,450,104, 2002
Flexible technologies for self-powered wearable health and environmental sensing
V Misra, A Bozkurt, B Calhoun, T Jackson, JS Jur, J Lach, B Lee, J Muth, ...
Proceedings of the IEEE 103 (4), 665-681, 2015
Smart transmitters and receivers for underwater free-space optical communication
JA Simpson, BL Hughes, JF Muth
IEEE Journal on selected areas in communications 30 (5), 964-974, 2012
Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease
J Dieffenderfer, H Goodell, S Mills, M McKnight, S Yao, F Lin, E Beppler, ...
IEEE journal of biomedical and health informatics 20 (5), 1251-1264, 2016
Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric
A Suresh, S Novak, P Wellenius, V Misra, JF Muth
Applied Physics Letters 94 (12), 123501, 2009
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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