| Growth and self-organization of SiGe nanostructures JN Aqua, I Berbezier, L Favre, T Frisch, A Ronda Physics Reports 522 (2), 59-189, 2013 | 255 | 2013 |
| SiGe nanostructures I Berbezier, A Ronda Surface Science Reports 64 (2), 47-98, 2009 | 185 | 2009 |
| Ge dot organization on Si substrates patterned by focused ion beam A Karmous, A Cuenat, A Ronda, I Berbezier, S Atha, R Hull Applied physics letters 85 (26), 6401-6403, 2004 | 125 | 2004 |
| Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ... ACS nano 8 (11), 11181-11190, 2014 | 108 | 2014 |
| A microstructural study of porous silicon I Berbezier, A Halimaoui Journal of applied physics 74 (9), 5421-5425, 1993 | 108 | 1993 |
| Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ... Science advances 3 (11), eaao1472, 2017 | 107 | 2017 |
| Formation of silicene nanosheets on graphite M De Crescenzi, I Berbezier, M Scarselli, P Castrucci, M Abbarchi, ... Acs Nano 10 (12), 11163-11171, 2016 | 107 | 2016 |
| Surface electron‐diffraction patterns of β‐FeSi2 films epitaxially grown on silicon JE Mahan, VL Thanh, J Chevrier, I Berbezier, J Derrien, RG Long Journal of applied physics 74 (3), 1747-1761, 1993 | 103 | 1993 |
| All-dielectric color filters using SiGe-based Mie resonator arrays T Wood, M Naffouti, J Berthelot, T David, JB Claude, L Métayer, ... ACS photonics 4 (4), 873-883, 2017 | 98 | 2017 |
| Formation and ordering of Ge nanocrystals on A Karmous, I Berbezier, A Ronda Physical Review B—Condensed Matter and Materials Physics 73 (7), 075323, 2006 | 95 | 2006 |
| SiGe nanostructures: new insights into growth processes I Berbezier, A Ronda, A Portavoce Journal of Physics: Condensed Matter 14 (35), 8283, 2002 | 90 | 2002 |
| Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates AG Nassiopoulos, S Grigoropoulos, L Canham, A Halimaoui, I Berbezier, ... Thin Solid Films 255 (1-2), 329-333, 1995 | 84 | 1995 |
| Sb-surfactant-mediated growth of Si and Ge nanostructures A Portavoce, I Berbezier, A Ronda Physical Review B 69 (15), 155416, 2004 | 78 | 2004 |
| Porous silicon: material properties, visible photo-and electroluminescence G Bomchil, A Halimaoui, I Sagnes, PA Badoz, I Berbezier, P Perret, ... Applied surface science 65, 394-407, 1993 | 76 | 1993 |
| Self-assembly and ordering mechanisms of Ge islands on prepatterned Si (001) A Pascale, I Berbezier, A Ronda, PC Kelires Physical Review B—Condensed Matter and Materials Physics 77 (7), 075311, 2008 | 68 | 2008 |
| Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities I Berbezier, A Ronda, A Portavoce, N Motta Applied Physics Letters 83 (23), 4833-4835, 2003 | 61 | 2003 |
| diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of nanoscopic clusters on the electronic and magnetic properties P De Padova, JP Ayoub, I Berbezier, P Perfetti, C Quaresima, AM Testa, ... Physical Review B—Condensed Matter and Materials Physics 77 (4), 045203, 2008 | 59 | 2008 |
| Selective and epitaxial deposition of β‐FeSi2 on silicon by rapid thermal processing‐chemical vapor deposition using a solid iron source JL Regolini, F Trincat, I Berbezier, Y Shapira Applied physics letters 60 (8), 956-958, 1992 | 57 | 1992 |
| van der Waals heteroepitaxy of germanene islands on graphite L Persichetti, F Jardali, H Vach, A Sgarlata, I Berbezier, M De Crescenzi, ... The journal of physical chemistry letters 7 (16), 3246-3251, 2016 | 55 | 2016 |
| Synthesis and properties of epitaxial semiconducting silicides J Derrien, J Chevrier, I Berbezier, C Giannini, S Lagomarsino, ... Applied surface science 73, 90-101, 1993 | 55 | 1993 |
