| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 622 | 2009 |
| Memory device and method of operating the same H Lee, K Kwon US Patent 7,457,181, 2008 | 384 | 2008 |
| Transistors, semiconductor devices and methods of manufacturing the same J Park, K Kwon US Patent 8,384,076, 2013 | 332 | 2013 |
| Microstructure and reliability of copper interconnects C Ryu, KW Kwon, ALS Loke, H Lee, T Nogami, VM Dubin, RA Kavari, ... IEEE transactions on electron devices 46 (6), 1113-1120, 1999 | 267 | 1999 |
| High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation J Park, S Kim, C Kim, S Kim, I Song, H Yin, KK Kim, S Lee, K Hong, J Lee, ... Applied Physics Letters 93 (5), 2008 | 179 | 2008 |
| Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors J Park, I Song, S Kim, S Kim, C Kim, J Lee, H Lee, E Lee, H Yin, KK Kim, ... Applied Physics Letters 93 (5), 2008 | 141 | 2008 |
| Thermal stability of a Cu/Ta multilayer: an intriguing interfacial reaction HJ Lee, KW Kwon, C Ryu, R Sinclair Acta materialia 47 (15-16), 3965-3975, 1999 | 138 | 1999 |
| Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ... IEEE Electron Device Letters 29 (8), 879-881, 2008 | 123 | 2008 |
| Evidence of heteroepitaxial growth of copper on beta-tantalum KW Kwon, C Ryu, R Sinclair, SS Wong Applied Physics Letters 71 (21), 3069-3071, 1997 | 110 | 1997 |
| Solid-state amorphization at tetragonal-Ta/Cu interfaces KW Kwon, HJ Lee, R Sinclair Applied physics letters 75 (7), 935-937, 1999 | 106 | 1999 |
| Highly manufacturable process technology for reliable 256 Mbit and 1 Gbit DRAMs HK Kang, KH Kim, YG Shin, IS Park, KM Ko, CG Kim, KY Oh, SE Kim, ... Proceedings of 1994 IEEE International Electron Devices Meeting, 635-638, 1994 | 104 | 1994 |
| High dielectric constant capacitor and method for manufacturing the same K Kwon, Y Kim US Patent 5,195,018, 1993 | 95 | 1993 |
| Selenium nanowires and nanotubes synthesized via a facile template-free solution method H Chen, DW Shin, JG Nam, KW Kwon, JB Yoo Materials Research Bulletin 45 (6), 699-704, 2010 | 91 | 2010 |
| Thermally robust Ta/sub 2/O/sub 5/capacitor for the 256-Mbit DRAM KW Kwon, CS Kang, SO Park, HK Kang, ST Ahn IEEE Transactions on Electron Devices 43 (6), 919-923, 1996 | 89 | 1996 |
| Barriers for copper interconnections C Ryu, H Lee, KW Kwon, ALS Loke, SS Wong Solid state technology 42 (4), 53-56, 1999 | 85 | 1999 |
| 7.4 A covalent-bonded cross-coupled current-mode sense amplifier for STT-MRAM with 1T1MTJ common source-line structure array C Kim, K Kwon, C Park, S Jang, J Choi 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 67 | 2015 |
| Atomic layer deposition of Al 2 O 3 on MoS 2, WS 2, WSe 2, and h-BN: surface coverage and adsorption energy T Park, H Kim, M Leem, W Ahn, S Choi, J Kim, J Uh, K Kwon, SJ Jeong, ... RSC advances 7 (2), 884-889, 2017 | 61 | 2017 |
| Method for manfacturing a capacitor for a semiconductor memory device having a tautalum oxide film K Kwon, C Kang US Patent 5,552,337, 1996 | 50 | 1996 |
| A study on the bonding process of Cu bump/Sn/Cu bump bonding structure for 3D packaging applications B Lee, J Park, S Jeon, K Kwon, H Lee Journal of The Electrochemical Society 157 (4), H420, 2010 | 42 | 2010 |
| Highly scalable and CMOS-compatible STTM cell technology SJ Ahn, GH Koh, KW Kwon, SJ Baik, GT Jung, YN Hwang, HS Jeong, ... IEEE International Electron Devices Meeting 2003, 10.4. 1-10.4. 4, 2003 | 40 | 2003 |
