Raisul Islam
Raisul Islam
Corporate Research, TSMC Technology Inc, San Jose, CA
Verified email at stanford.edu
TitleCited byYear
Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts
R Islam, G Shine, KC Saraswat
Applied Physics Letters 105 (18), 182103, 2014
Investigation of the Changes in Electronic Properties of Nickel Oxide (NiOx) due to UV/Ozone Treatment
R Islam, G Chen, P Ramesh, J Suh, N Fuchigami, D Lee, KA Littau, ...
ACS Applied Materials and Interfaces, 2017
Renewable energy scenario of Bangladesh: Physical perspective
MZ Baten, EM Amin, A Sharin, R Islam, SA Chowdhury
2009 1st International Conference on the Developements in Renewable Energy …, 2009
Si Heterojunction Solar Cells: A Simulation Study of the Design Issues
R Islam, KN Nazif, K Saraswat
IEEE Transactions on Electron Devices 11 (99), 2016
Nickel oxide carrier selective contacts for silicon solar cells
R Islam, P Ramesh, JH Nam, K Saraswat
IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015
Metal/insulator/semiconductor carrier selective contacts for photovoltaic cells
R Islam, KC Saraswat
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 0285-0289, 2014
Device and Materials Requirements for Neuromorphic Computing
R Islam, H Li, PY Chen, W Wan, HY Chen, B Gao, H Wu, S Yu, ...
Journal of Physics D: Applied Physics, 2018
Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8%
M Xue, R Islam, AC Meng, CY Lyu, Zheng, Lu, C Tae, MR Braun, K Zang, ...
ACS Applied Materials and Interfaces, 2017
Carrier-selective interlayer materials for silicon solar cell contacts
M Xue, R Islam, Y Chen, J Chen, CY Lu, AM Pleus, C Tae, K Xu, Y Liu, ...
Journal of Applied Physics 123 (143101), 2018
Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
N El-Atab, TG Ulusoy, A Ghobadi, J Suh, R Islam, AK Okyay, K Saraswat, ...
Nanotechnology 28 (44), 445201, 2017
On the distinction between triple gate (TG) and double gate (DG) SOI FinFETs: A proposal of critical top oxide thickness
R Islam, MZ Baten, EM Amin, QDM Khosru
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
Optimization of selective contacts in Si heterojunction photovoltaic cells considering Fermi level pinning and interface passivation
R Islam, KN Nazif, K Saraswat
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2440-2443, 2016
Quantum mechanical effect on determining threshold voltage of trigate FinFET using self-consistent analysis
EM Amin, MZ Baten, R Islam, QDM Khosru
TENCON 2009-2009 IEEE Region 10 Conference, 1-5, 2009
Limitation of Optical Enhancement in Ultra-thin Solar Cells Imposed by Contact Selectivity
R Islam, K Saraswat
Scientific Reports 8, 2018
A physically based compact model for eigenenergy in in rich In1−xGaxAs MOSFETs using modified Airy function approximation
R Islam, A Haque
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
Self consistent simulation for CV characterization of sub 10nm Tri-Gate and Double Gate SOI FinFETs incorporating quantum mechanical effects
MZ Baten, R Islam, EM Amin, QDM Khosru
2009 IEEE Student Conference on Research and Development (SCOReD), 284-287, 2009
Battery chemistry detection algorithm implementable with intelligent systems: A step towards the development of a novel charger applicable for multi-chemistry environment
R Islam, SRM Anwar, AT Kamal, SN Rahman, HM Faraby, H Imtiaz, ...
2008 Second International Symposium on Intelligent Information Technology …, 2008
On the limit of defect doping in transition metal oxides
A Kumar, R Islam, D Pramanik, K Saraswat
Journal of Vacuum Science & Technology A 37 (2), 021505, 2019
Thermal modeling of metal oxides for highly scaled nanoscale RRAM
S Deshmukh, R Islam, C Chen, E Yalon, KC Saraswat, E Pop
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 …, 2015
Potential future generation nanoscale MOS device: Trigate (TG) or Double Gate (DG) FinFETs?
R Islam, EM Amin, MZ Baten, QDM Khosru
2010 3rd International Nanoelectronics Conference (INEC), 269-270, 2010
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Articles 1–20