| Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide CJ Cochrane, J Blacksberg, MA Anders, PM Lenahan Scientific reports 6, 37077, 2016 | 38 | 2016 |
| Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance MA Anders, PM Lenahan, CJ Cochrane, AJ Lelis IEEE Transactions on Electron Devices 62 (2), 301-308, 2014 | 24 | 2014 |
| Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface MA Anders, PM Lenahan, AJ Lelis Journal of Applied Physics 122 (23), 234503, 2017 | 14 | 2017 |
| Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors? MA Anders, PM Lenahan, AJ Lelis Applied Physics Letters 109 (14), 142106, 2016 | 13 | 2016 |
| Ionizing radiation effects in 4H-SiC nMOSFETs studied with electrically detected magnetic resonance RJ Waskiewicz, MA Anders, PM Lenahan, AJ Lelis IEEE Transactions on Nuclear Science 64 (1), 197-203, 2016 | 10 | 2016 |
| Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ... IEEE Transactions on Device and Materials Reliability 18 (2), 139-143, 2018 | 7 | 2018 |
| Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance PM Lenahan, MA Anders, RJ Waskiewicz, AJ Lelis Microelectronics Reliability 81, 1-6, 2018 | 6 | 2018 |
| Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators MA Anders, PM Lenahan, CJ Cochrane, J Van Tol Journal of Applied Physics 124 (21), 215105, 2018 | 5 | 2018 |
| Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders Journal of Applied Physics 126 (14), 145702, 2019 | 4 | 2019 |
| Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC MA Anders, PM Lenahan, AJ Lelis 2015 IEEE International Reliability Physics Symposium, 3E. 4.1-3E. 4.5, 2015 | 4 | 2015 |
| Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs MA Anders, PM Lenahan, J Follman, SD Arthur, J McMahon, L Yu, X Zhu, ... 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 4 | 2014 |
| Slow-and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ... Review of Scientific Instruments 90 (1), 014708, 2019 | 3 | 2019 |
| Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near … MA Anders, PM Lenahan, AH Edwards, PA Schultz, RM Van Ginhoven Journal of Applied Physics 124 (18), 184501, 2018 | 3 | 2018 |
| The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping MA Anders, PM Lenahan, AJ Lelis Materials Science Forum 924, 469-472, 2018 | 3 | 2018 |
| Quantitative electrically detected magnetic resonance for device reliability studies CJ Cochrane, M Anders, M Mutch, P Lenahan 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 6-9, 2014 | 3 | 2014 |
| Magnetic Field Sensing with Atomic Scale Defects in SiC Devices CJ Cochrane, J Blacksberg, PM Lenahan, MA Anders Materials Science Forum 858, 265-268, 2016 | 2 | 2016 |
| Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 1 | 2019 |
| Wafer level EDMR: Magnetic resonance in a probing station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, JP Campbell, ... 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 1 | 2017 |
| New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping MA Anders, PM Lenahan, AJ Lelis 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 1 | 2017 |
| A Surprising Result:“Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs MA Anders, PM Lenahan, A Lelis Materials Science Forum 858, 513-517, 2016 | 1 | 2016 |
