Mark A Anders
Titolo
Citata da
Citata da
Anno
Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide
CJ Cochrane, J Blacksberg, MA Anders, PM Lenahan
Scientific reports 6, 37077, 2016
382016
Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance
MA Anders, PM Lenahan, CJ Cochrane, AJ Lelis
IEEE Transactions on Electron Devices 62 (2), 301-308, 2014
242014
Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface
MA Anders, PM Lenahan, AJ Lelis
Journal of Applied Physics 122 (23), 234503, 2017
142017
Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?
MA Anders, PM Lenahan, AJ Lelis
Applied Physics Letters 109 (14), 142106, 2016
132016
Ionizing radiation effects in 4H-SiC nMOSFETs studied with electrically detected magnetic resonance
RJ Waskiewicz, MA Anders, PM Lenahan, AJ Lelis
IEEE Transactions on Nuclear Science 64 (1), 197-203, 2016
102016
Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station
DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ...
IEEE Transactions on Device and Materials Reliability 18 (2), 139-143, 2018
72018
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance
PM Lenahan, MA Anders, RJ Waskiewicz, AJ Lelis
Microelectronics Reliability 81, 1-6, 2018
62018
Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators
MA Anders, PM Lenahan, CJ Cochrane, J Van Tol
Journal of Applied Physics 124 (21), 215105, 2018
52018
Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
Journal of Applied Physics 126 (14), 145702, 2019
42019
Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC
MA Anders, PM Lenahan, AJ Lelis
2015 IEEE International Reliability Physics Symposium, 3E. 4.1-3E. 4.5, 2015
42015
Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs
MA Anders, PM Lenahan, J Follman, SD Arthur, J McMahon, L Yu, X Zhu, ...
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
42014
Slow-and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station
DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ...
Review of Scientific Instruments 90 (1), 014708, 2019
32019
Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near …
MA Anders, PM Lenahan, AH Edwards, PA Schultz, RM Van Ginhoven
Journal of Applied Physics 124 (18), 184501, 2018
32018
The Effect of Nitrogen on the 4H-SiC/SiO2 Interface Studied with Variable Resonance Frequency Spin Dependent Charge Pumping
MA Anders, PM Lenahan, AJ Lelis
Materials Science Forum 924, 469-472, 2018
32018
Quantitative electrically detected magnetic resonance for device reliability studies
CJ Cochrane, M Anders, M Mutch, P Lenahan
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 6-9, 2014
32014
Magnetic Field Sensing with Atomic Scale Defects in SiC Devices
CJ Cochrane, J Blacksberg, PM Lenahan, MA Anders
Materials Science Forum 858, 265-268, 2016
22016
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination
JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders
2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019
12019
Wafer level EDMR: Magnetic resonance in a probing station
DJ McCrory, MA Anders, JT Ryan, PR Shrestha, JP Campbell, ...
2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017
12017
New tools for MOSFET interface defect characterization: High, ultra-low, and zero magnetic field spin dependent charge pumping
MA Anders, PM Lenahan, AJ Lelis
2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017
12017
A Surprising Result:“Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
MA Anders, PM Lenahan, A Lelis
Materials Science Forum 858, 513-517, 2016
12016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20