Michele Baldini
Michele Baldini
Leibniz Institute for Crystal Growth
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 213501, 2016
-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
Recent progress in the growth of β-Ga2O3 for power electronics applications
M Baldini, Z Galazka, G Wagner
Materials Science in Semiconductor Processing 78, 132-146, 2018
Electrical compensation by Ga vacancies in Ga2O3 thin films
E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 242103, 2015
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 165701, 2017
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 225308, 2016
Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy
M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner
Semiconductor Science and Technology 30 (2), 024013, 2015
Heteroepitaxy of Ga2(1‑x)In2xO3 layers by MOVPE with two different oxygen sources
M Baldini, D Gogova, K Irmscher, M Schmidbauer, G Wagner, R Fornari
Crystal Research and Technology 49 (8), 552-557, 2014
Characterization of epitaxial 4H-SiC for photon detectors
F Dubecký, E Gombia, C Ferrari, B Zat'ko, G Vanko, M Baldini, J Kováč, ...
Journal of Instrumentation 7 (09), P09005, 2012
Co-evaporated YBCO/doped-CeO2/Ni–W coated conductors oxygen improved using a supersonic nozzle
E Gilioli, M Baldini, M Bindi, F Bissoli, F Pattini, S Rampino, S Ginocchio, ...
Physica C: Superconductivity and its applications 463, 609-614, 2007
Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs
F Dubecký, M Dubecký, P Hubík, D Kindl, E Gombia, M Baldini, V Nečas
Solid-state electronics 82, 72-76, 2013
Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
F Tuomisto, A Karjalainen, V Prozheeva, I Makkonen, G Wagner, ...
Oxide-Based Materials and Devices X 10919, 23-30, 2019
Growth and characterization of buried GaSb p‐n junctions for photovoltaic applications
M Baldini, C Ghezzi, A Parisini, L Tarricone, S Vantaggio, E Gombia, ...
Crystal Research and Technology 46 (8), 852-856, 2011
Progress on single buffer layered coated conductors prepared by thermal evaporation
A Gauzzi, M Baldini, M Bindi, F Bissoli, E Gilioli, S Ginocchio, F Pattini, ...
IEEE transactions on applied superconductivity 17 (2), 3413-3416, 2007
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
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