Segui
LORENZO BENATTI
Titolo
Citata da
Citata da
Anno
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ...
Advanced Electronic Materials 8 (6), 2101395, 2022
252022
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ...
Neuromorphic Computing and Engineering 2 (2), 024001, 2022
132022
A hybrid cmos-memristor spiking neural network supporting multiple learning rules
D Florini, D Gandolfi, J Mapelli, L Benatti, P Pavan, FM Puglisi
IEEE Transactions on Neural Networks and Learning Systems, 2022
102022
Combining experiments and a novel small signal model to investigate the degradation mechanisms in ferroelectric tunnel junctions
L Benatti, P Pavan, FM Puglisi
2022 IEEE International Reliability Physics Symposium (IRPS), P6-1-P6-5, 2022
42022
Understanding the reliability of ferroelectric tunnel junction operations using an advanced small-signal model
L Benatti, FM Puglisi
2021 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2021
42021
Impedance investigation of MIFM ferroelectric tunnel junction using a comprehensive small-signal model
L Benatti, FM Puglisi
IEEE Transactions on Device and Materials Reliability 22 (3), 332-339, 2022
32022
The role of defects and interface degradation on ferroelectric HZO capacitors aging
L Benatti, S Vecchi, M Pesic, FM Puglisi
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
Impedance spectroscopy of ferroelectric capacitors and ferroelectric tunnel junctions
L Benatti, S Vecchi, FM Puglisi
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2022
22022
Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture
L Benatti, T Zanotti, P Pavan, FM Puglisi
Microelectronic Engineering 280, 112062, 2023
12023
Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses
L Benatti, T Zanotti, D Gandolfi, J Mapelli, FM Puglisi
Nano Futures 7 (2), 025003, 2023
12023
Linking the intrinsic electrical response of ferroelectric devices to material properties by means of impedance spectroscopy
L Benatti, S Vecchi, FM Puglisi
IEEE Transactions on Device and Materials Reliability, 2023
12023
Information Transfer in Neuronal Circuits: From Biological Neurons to Neuromorphic Electronics
D Gandolfi, L Benatti, T Zanotti, GM Boiani, A Bigiani, FM Puglisi, ...
Intelligent Computing 3, 0059, 2024
2024
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 23
A Amin, T An, S Ananiev, YE Aras, G Arutchelvan, RN Asli, Y Avenas, ...
IEEE Transactions on Device and Materials Reliability 23 (4), 2023
2023
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses
L Benatti, T Zanotti, D Gandolfi, J Mapelli, FM Puglisi
NANO FUTURES, 1-8, 2023
2023
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 22
B Arunachalam, RN Asli, L Atzeni, T Aytug, H Aziza, N Bagga, Y Ban, ...
IEEE Transactions on Device and Materials Reliability 22 (4), 2022
2022
COMMERCIAL-GRADE PACKAGED RESISTIVE MEMORIES FOR ULTRA-LOW POWER LOGIC: CHARACTERIZATION AND PERFORMANCE EVALUATION
L BENATTI
2020
SPECIAL SECTION ON IIRW
L Benatti, S Vecchi, FM Puglisi
Optimization of the injection beam line at the Cooler Synchrotron COSY using Bayesian Optimization
L Benatti, T Zanotti, D Gandolfi
SPECIAL SECTION ON IIRW
FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan, ...
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–19