| Negative differential resistance in dislocation-free GaN∕ AlGaN double-barrier diodes grown on bulk GaN S Golka, C Pflügl, W Schrenk, G Strasser, C Skierbiszewski, M Siekacz, ... Applied physics letters 88 (17), 2006 | 146 | 2006 |
| Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy C Skierbiszewski, ZR Wasilewski, M Siekacz, A Feduniewicz, P Perlin, ... Applied Physics Letters 86 (1), 2005 | 98 | 2005 |
| High mobility two-dimensional electron gas in AlGaN∕ GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy C Skierbiszewski, K Dybko, W Knap, M Siekacz, W Krupczyński, G Nowak, ... Applied Physics Letters 86 (10), 2005 | 97 | 2005 |
| 60mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy C Skierbiszewski, P Wiśniewski, M Siekacz, P Perlin, ... Applied Physics Letters 88 (22), 2006 | 77 | 2006 |
| Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, H Turski, G Muziol, M Siekacz, M Sawicka, G Cywiński, ... Journal of Physics D: Applied Physics 47 (7), 073001, 2014 | 67 | 2014 |
| High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy C Skierbiszewski, P Perlin, I Grzegory, ZR Wasilewski, M Siekacz, ... Semiconductor science and technology 20 (8), 809, 2005 | 59 | 2005 |
| Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells L Lymperakis, T Schulz, C Freysoldt, M Anikeeva, Z Chen, X Zheng, ... Physical Review Materials 2 (1), 011601, 2018 | 56 | 2018 |
| Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma‐assisted molecular beam epitaxy C Skierbiszewski, Z Wasilewski, M Siekacz, A Feduniewicz, B Pastuszka, ... physica status solidi (a) 201 (2), 320-323, 2004 | 55 | 2004 |
| Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M Siekacz, M Sawicka, H Turski, G Cywiński, A Khachapuridze, P Perlin, ... Journal of Applied Physics 110 (6), 2011 | 54 | 2011 |
| Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers H Turski, M Siekacz, ZR Wasilewski, M Sawicka, S Porowski, ... Journal of crystal growth 367, 115-121, 2013 | 52 | 2013 |
| Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy M Siekacz, A Feduniewicz-Żmuda, G Cywiński, M Kryśko, I Grzegory, ... Journal of crystal growth 310 (17), 3983-3986, 2008 | 45 | 2008 |
| True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy C Skierbiszewski, G Muziol, K Nowakowski-Szkudlarek, H Turski, ... Applied Physics Express 11 (3), 034103, 2018 | 43 | 2018 |
| Free and bound excitons in GaN∕ AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯ 0) direction H Teisseyre, C Skierbiszewski, B Łucznik, G Kamler, A Feduniewicz, ... Applied Physics Letters 86 (16), 2005 | 42 | 2005 |
| Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide G Muziol, H Turski, M Siekacz, S Grzanka, P Perlin, C Skierbiszewski Applied Physics Express 9 (9), 092103, 2016 | 39 | 2016 |
| Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ... Optics Express 27 (4), 5784-5791, 2019 | 38 | 2019 |
| Contactless electroreflectance of InGaN layers with indium content≤ 36%: The surface band bending, band gap bowing, and Stokes shift issues R Kudrawiec, M Siekacz, M Kryśko, G Cywiński, J Misiewicz, ... Journal of Applied Physics 106 (11), 2009 | 38 | 2009 |
| InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE M Siekacz, MŁ Szańkowska, A Feduniewicz‐Zmuda, ... physica status solidi c 6 (S2 2), S917-S920, 2009 | 38 | 2009 |
| Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ... Acs Photonics 6 (8), 1963-1971, 2019 | 37 | 2019 |
| Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy G Muziol, H Turski, M Siekacz, P Wolny, S Grzanka, E Grzanka, P Perlin, ... Applied Physics Express 8 (3), 032103, 2015 | 37 | 2015 |
| The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywinski, M Siekacz, ... Applied Physics Letters 98 (23), 2011 | 37 | 2011 |
