Robert F. Davis
Robert F. Davis
Email verificata su andrew.cmu.edu
Titolo
Citata da
Citata da
Anno
Strain-related phenomena in GaN thin films
C Kisielowski, J Krger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
8861996
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8191997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
6161997
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
569*1995
III-V nitrides for electronic and optoelectronic applications
RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
5471991
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
5431991
A critical review of ohmic and rectifying contacts for silicon carbide
LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
5221995
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3…, 1989
4521989
Gold Schottky contacts on oxygen plasma-treated, n-type
BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
4162003
Carbon ARC Generation of C60
RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
343*1990
Cleaning of AlN and GaN surfaces
SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
3301998
Epitaxial Growth and Characterization of β‐SiC Thin Films
P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
3191985
GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
ApPhL 67 (3), 401-403, 1995
3061995
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2872000
Diamond films and coatings
RF Davis
Noyes Publications(USA), 1993,, 435, 1993
2841993
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
2561988
Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001)
MC Benjamin, C Wang, RF Davis, RJ Nemanich
Applied physics letters 64 (24), 3288-3290, 1994
2521994
Pendeoepitaxy of gallium nitride thin films
K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied physics letters 75 (2), 196-198, 1999
2431999
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
2412001
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
2401988
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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