Strain-related phenomena in GaN thin films C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
872 1996 Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
816 1997 Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
609 1997 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
563 * 1995 III-V nitrides for electronic and optoelectronic applications RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
541 1991 Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
539 1991 A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
516 1995 Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
446 1989 Gold Schottky contacts on oxygen plasma-treated, n -type BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
415 2003 Carbon ARC Generation of C60 RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
342 * 1990 Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
326 1998 Epitaxial Growth and Characterization of β‐SiC Thin Films P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
317 1985 GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
ApPhL 67 (3), 401-403, 1995
303 1995 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
286 2000 Diamond films and coatings RF Davis
Noyes Publications(USA), 1993,, 435, 1993
282 1993 Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
254 1988 Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001) MC Benjamin, C Wang, RF Davis, RJ Nemanich
Applied physics letters 64 (24), 3288-3290, 1994
250 1994 Pendeoepitaxy of gallium nitride thin films K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied physics letters 75 (2), 196-198, 1999
243 1999 Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
240 2001 Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
240 1988 