Robert F. Davis
Robert F. Davis
Email verificata su andrew.cmu.edu
TitoloCitata daAnno
Strain-related phenomena in GaN thin films
C Kisielowski, J Krger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
8561996
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8121997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
5991997
Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
556*1995
III-V nitrides for electronic and optoelectronic applications
RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
5321991
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
5181991
A critical review of ohmic and rectifying contacts for silicon carbide
LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
4981995
Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3…, 1989
4461989
Gold Schottky contacts on oxygen plasma-treated, n-type
BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
3952003
Cleaning of AlN and GaN surfaces
SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
3171998
Epitaxial Growth and Characterization of β‐SiC Thin Films
P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
3131985
GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
Applied physics letters 67, 401-403, 1995
3031995
Carbon ARC Generation of C60
RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
289*1990
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2862000
Diamond films and coatings
RF Davis
Noyes Publications(USA), 1993,, 435, 1993
2781993
Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
2521988
Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001)
MC Benjamin, C Wang, RF Davis, RJ Nemanich
Applied physics letters 64 (24), 3288-3290, 1994
2481994
Pendeoepitaxy of gallium nitride thin films
K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied physics letters 75 (2), 196-198, 1999
2391999
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
2382001
Phase evolution in boron nitride thin films
DJ Kester, KS Ailey, RF Davis, KL More
Journal of materials research 8 (6), 1213-1216, 1993
2341993
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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