Strain-related phenomena in GaN thin films C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
937 1996 Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
856 1997 Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied physics letters 71 (17), 2472-2474, 1997
660 1997 III-V nitrides for electronic and optoelectronic applications RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
603 1991 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
588 * 1995 Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
559 1991 A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
547 1995 Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
484 1989 Gold Schottky contacts on oxygen plasma-treated, n -type BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
436 2003 Diamond films and coatings RF Davis
Noyes Publications(USA), 1993,, 435, 1993
402 1993 Carbon arc generation of C60 RE Haufler, Y Chai, LPF Chibante, J Conceicao, C Jin, LS Wang, ...
MRS Online Proceedings Library Archive 206, 1990
371 * 1990 Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
351 1998 Epitaxial Growth and Characterization of β‐SiC Thin Films P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
350 1985 GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)–SiC (0001) using high‐temperature monocrystalline AlN buffer layers T Warren Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, ...
Applied physics letters 67 (3), 401-403, 1995
329 1995 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
289 2000 Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
279 1988 Observation of a negative electron affinity for heteroepitaxial AlN on α (6H)‐SiC (0001) MC Benjamin, C Wang, RF Davis, RJ Nemanich
Applied physics letters 64 (24), 3288-3290, 1994
261 1994 Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
261 1988 Pendeoepitaxy of gallium nitride thin films K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied Physics Letters 75 (2), 196-198, 1999
256 1999 Structural TEM study of nonpolar a-plane gallium nitride grown on (11 2¯ 0) 4 H-SiC by organometallic vapor phase epitaxy DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ...
Physical Review B 71 (23), 235334, 2005
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