Guido Masetti
Title
Cited by
Cited by
Year
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
G Masetti, M Severi, S Solmi
IEEE Transactions on electron devices 30 (7), 764-769, 1983
9261983
Problems in precision modeling of the MOS transistor for analog applications
Y Tsividis, G Masetti
IEEE transactions on computer-aided design of integrated circuits and …, 1984
901984
On phosphorus diffusion in silicon under oxidizing atmospheres
G Masetti, S Solmi, G Soncini
Solid-State Electronics 16 (12), 1419-1421, 1973
781973
A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs
C Turchetti, P Mancini, G Masetti
IEEE journal of solid-state circuits 21 (5), 827-836, 1986
641986
A macromodel for integrated all-MOS operational amplifiers
C Turchetti, G Masetti
IEEE journal of solid-state circuits 18 (4), 389-394, 1983
611983
New macromodels and measurements for the analysis of EMI effects in 741 op-amp circuits
S Graffi, G Masetti, D Golzio
IEEE transactions on electromagnetic compatibility 33 (1), 25-34, 1991
601991
Failures induced on analog integrated circuits by conveyed electromagnetic interferences: A review
G Masetti, S Graffi, D Golzio, ZM Kovács-V
Microelectronics Reliability 36 (7-8), 955-972, 1996
591996
On the small-signal behaviour of the MOS transistor in quasistatic operation
C Turchetti, G Masetti, Y Tsividis
Solid-state electronics 26 (10), 941-948, 1983
591983
CMOS implementation of an analogically programmable cellular neural network
GFD Betta, S Graffi, ZM Kovacs, G Masetti
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 1993
451993
Oxidation-rate dependence of phosphorus diffusivity in silicon
G Masetti, S Solmi, G Soncini
Philosophical Magazine 33 (4), 613-621, 1976
411976
TEMPERATURE DEPENDENCE OF BORON DIFFUSION IN (111),(110) AND (100) SILICON.
G Masetti
391976
A non-quasi-static analysis of the transient behavior of the long-channel MOST valid in all regions of operation
P Mancini, C Turchetti, G Masetti
IEEE transactions on electron devices 34 (2), 325-334, 1987
361987
Predictive deconvolution and hybrid feature selection for computer-aided detection of prostate cancer
S Maggio, A Palladini, L De Marchi, M Alessandrini, N Speciale, G Masetti
IEEE transactions on medical imaging 29 (2), 455-464, 2009
352009
Profiles of phosphorus predeposited in silicon and carrier concentration in equilibrium with SiP precipitates
G Masetti, D Nobili, S Solmi
Semiconductor silicon 1977 77, 648-657, 1977
341977
A CAD-oriented analytical MOSFET model for high-accuracy applications
C Turchetti, G Masetti
IEEE transactions on computer-aided design of integrated circuits and …, 1984
291984
Model-based compressive sensing for damage localization in lamb wave inspection.
MG Perelli A., Di Ianni T., Marzani A., De Marchi L.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 60 …, 2013
282013
Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus
G Masetti, S Solmi
IEE Journal on Solid-State and Electron Devices 3 (3), 65-68, 1979
281979
The ALICE silicon drift detectors: Production and assembly
S Beolè, B Alessandro, S Antinori, S Coli, F Costa, E Crescio, D Falchieri, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
272007
On the key role of parasitic capacitances in the determination of susceptibility to EMI of integrated operational amplifiers
G Masetti, G Setti, N Speciale
Proc. Of EMC Zurich, 1999
271999
Criteria to reduce failures induced from conveyed electromagnetic interferences on CMOS operational amplifiers
S Graffi, G Masetti, A Piovaccari
Microelectronics Reliability 37 (1), 95-113, 1997
271997
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