3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped 2 O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
585 2016 Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
287 2016 Semiconducting Sn-doped β-Ga2 O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
158 2016 Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ...
Apl Materials 7 (2), 2019
103 2019 Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ...
Journal of Crystal Growth 486, 82-90, 2018
101 2018 Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
101 2016 Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ...
Journal of Crystal Growth 529, 125297, 2020
97 2020 Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ...
APL Materials 7 (2), 2019
97 2019 Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
96 2017 Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ...
Applied Physics Letters 116 (18), 2020
77 2020 Static dielectric constant of β-Ga2O3 perpendicular to the principal planes (100),(010), and (001) A Fiedler, R Schewski, Z Galazka, K Irmscher
ECS Journal of Solid State Science and Technology 8 (7), Q3083, 2019
68 2019 Suppressing a Charge Density Wave by Changing Dimensionality in the Ferecrystalline Compounds ([SnSe]1.15 )1 (VSe2 )n n = 1, 2, 3, 4 M Falmbigl, A Fiedler, RE Atkins, SF Fischer, DC Johnson
Nano Letters 15 (2), 943-948, 2015
56 2015 Synthesis and Systematic Trends in Structure and Electrical Properties of [(SnSe)1.15 ]m 2 )1 , m = 1, 2, 3, and 4 R Atkins, M Dolgos, A Fiedler, C Grosse, SF Fischer, SP Rudin, ...
Chemistry of Materials 26 (9), 2862-2872, 2014
43 2014 Melt growth and properties of bulk BaSnO3 single crystals Z Galazka, R Uecker, K Irmscher, D Klimm, R Bertram, A Kwasniewski, ...
Journal of Physics: Condensed Matter 29 (7), 075701, 2016
42 2016 Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE SB Anooz, R Grüneberg, TS Chou, A Fiedler, K Irmscher, C Wouters, ...
Journal of Physics D: Applied Physics 54 (3), 034003, 2020
39 2020 The anisotropic quasi-static permittivity of single-crystal β-Ga2O3 measured by terahertz spectroscopy P Gopalan, S Knight, A Chanana, M Stokey, P Ranga, MA Scarpulla, ...
Applied Physics Letters 117 (25), 2020
34 2020 Bulk β-Ga2O3 single crystals doped with Ce, Ce+ Si, Ce+ Al, and Ce+ Al+ Si for detection of nuclear radiation Z Galazka, R Schewski, K Irmscher, W Drozdowski, ME Witkowski, ...
Journal of Alloys and Compounds 818, 152842, 2020
34 2020 Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
22 2021 Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, L Meng, A Fiedler, HL Huang, AT Neal, ...
Journal of Applied Physics 131 (14), 2022
20 2022 Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy S Bin Anooz, A Popp, R Grüneberg, C Wouters, R Schewski, ...
Journal of Applied Physics 125 (19), 2019
19 2019 
Klaus IrmscherEmail verificata su ikz-berlin.de
