Pooya Jannaty
Pooya Jannaty
Email verificata su alumni.brown.edu
Titolo
Citata da
Citata da
Anno
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ...
Applied Physics Letters 94 (26), 263508, 2009
952009
Axial SiGe heteronanowire tunneling field-effect transistors
ST Le, P Jannaty, X Luo, A Zaslavsky, DE Perea, SA Dayeh, ST Picraux
Nano letters 12 (11), 5850-5855, 2012
462012
Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
ST Le, P Jannaty, A Zaslavsky, SA Dayeh, ST Picraux
Applied Physics Letters 96 (26), 262102, 2010
242010
Shot-noise-induced failure in nanoscale flip-flops part II: Failure rates in 10-nm ultimate CMOS
P Jannaty, FC Sabou, ST Le, M Donato, RI Bahar, W Patterson, J Mundy, ...
IEEE transactions on electron devices 59 (3), 807-812, 2012
92012
Two-dimensional Markov chain analysis of radiation-induced soft errors in subthreshold nanoscale CMOS devices
P Jannaty, FC Sabou, M Gadlage, RI Bahar, J Mundy, W Patterson, ...
IEEE Transactions on Nuclear Science 57 (6), 3768-3774, 2010
82010
Full two-dimensional Markov chain analysis of thermal soft errors in subthreshold nanoscale CMOS devices
P Jannaty, FC Sabou, RI Bahar, J Mundy, WR Patterson, A Zaslavsky
IEEE Transactions on Device and Materials Reliability 11 (1), 50-59, 2010
62010
Sharp-switching high-current tunneling devices
A Zaslavsky, J Wan, ST Le, P Jannaty, S Cristoloveanu, C Le Royer, ...
ECS Transactions 53 (5), 63, 2013
42013
Shot-Noise-Induced Failure in Nanoscale Flip-Flops—Part I: Numerical Framework
P Jannaty, FC Sabou, ST Le, M Donato, RI Donato, W Donato, J Mundy, ...
IEEE transactions on electron devices 59 (3), 800-806, 2012
32012
Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices
P Jannaty, FC Sabou, RI Bahar, J Mundy, WR Patterson, A Zaslavsky
Proceedings of the 20th symposium on Great lakes symposium on VLSI, 281-286, 2010
22010
Axial Si/Ge hetero-nanowires for tunneling transistors
S Le, D Perea, P Jannaty, X Luo, S Dayeh, A Zaslavsky, T Picraux
APS March Meeting Abstracts 2013, Y6. 002, 2013
12013
Photovoltaic properties of axial in-situ doped SiGe heteronanowires
ST Le, AD Mohite, DE Perea, H Htoon, P Jannaty, A Zaslavsky, ...
APS March Meeting Abstracts 2012, Z7. 003, 2012
2012
Ultrathin germanium-on-insulator tunneling field effect transistors
D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier
APS March Meeting Abstracts, Y28. 009, 2009
2009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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