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K. P. O'Donnell
K. P. O'Donnell
Email verificata su strath.ac.uk - Home page
Titolo
Citata da
Citata da
Anno
Temperature dependence of semiconductor band gaps
KP O’Donnell, X Chen
Applied Physics Letters 58 (25), 2924-2926, 1991
13691991
Origin of luminescence from InGaN diodes
KP O'Donnell, RW Martin, PG Middleton
Physical Review Letters 82 (1), 237, 1999
6441999
Exciton localization and the Stokes’ shift in InGaN epilayers
RW Martin, PG Middleton, KP O’Donnell, W Van der Stricht
Applied Physics Letters 74 (2), 263-265, 1999
3751999
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
S Pereira, MR Correia, E Pereira, KP O’Donnell, E Alves, AD Sequeira, ...
Applied Physics Letters 80 (21), 3913-3915, 2002
2812002
Origin of the Stokes shift: a geometrical model of exciton spectra in 2D semiconductors
F Yang, M Wilkinson, EJ Austin, KP O’Donnell
Physical Review Letters 70 (3), 323, 1993
2521993
Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
S Pereira, MR Correia, E Pereira, KP O’Donnell, C Trager-Cowan, ...
Physical Review B 64 (20), 205311, 2001
2322001
Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state
K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’Donnell
Physical Review Letters 97 (8), 085501, 2006
1832006
Luminescence decay in disordered low‐dimensional semiconductors
X Chen, B Henderson, KP O’Donnell
Applied Physics Letters 60 (21), 2672-2674, 1992
1721992
Origin of the 0.97 eV luminescence in irradiated silicon
KP O'Donnell, KM Lee, GD Watkins
Physica B+ C 116 (1-3), 258-263, 1983
1351983
Disorder and the optical spectroscopy of Cr3+-doped glasses: I. Silicate glasses
F Rasheed, KP O'Donnell, B Henderson, DB Hollis
Journal of Physics: Condensed Matter 3 (12), 1915, 1991
1331991
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness
S Pereira, MR Correia, E Pereira, C Trager-Cowan, F Sweeney, ...
Applied Physics Letters 81 (7), 1207-1209, 2002
1262002
Raman-scattering study of the InGaN alloy over the whole composition range
S Hernández, R Cuscó, D Pastor, L Artús, KP O'Donnell, RW Martin, ...
J Appl Phys, 2005
1192005
Rare-earth doped III-nitrides for optoelectronic and spintronic applications
VD (Eds.)K.P. O'Donnell
Springer, 2010
118*2010
Structural analysis of InGaN epilayers
KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White
Journal of Physics: Condensed Matter 13 (32), 6977, 2001
1182001
Identification of the prime optical center in GaN: Eu3+
IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B 81 (8), 085209, 2010
1162010
Selectively excited photoluminescence from Eu-implanted GaN
K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ...
Applied Physics Letters 87 (11), 2005
1122005
Optical linewidths of InGaN light emitting diodes and epilayers
KP O’Donnell, T Breitkopf, H Kalt, W Van der Stricht, I Moerman, ...
Applied Physics Letters 70 (14), 1843-1845, 1997
981997
Disorder and the optical spectroscopy of Cr3+-doped glasses. II. Glasses with high and low ligand fields
F Rasheed, KP O'Donnell, B Henderson, DB Hollis
Journal of Physics: Condensed Matter 3 (21), 3825, 1991
911991
Optical energies of AlInN epilayers
K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ...
Journal of Applied Physics 103 (7), 2008
902008
Rare earth doped III-nitrides for optoelectronics
KP O'Donnell, B Hourahine
The European Physical Journal-Applied Physics 36 (2), 91-103, 2006
882006
Il sistema al momento non puň eseguire l'operazione. Riprova piů tardi.
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