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S D Brotherton
S D Brotherton
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Title
Cited by
Cited by
Year
Defect production and lifetime control in electron and γ‐irradiated silicon
SD Brotherton, P Bradley
Journal of Applied Physics 53 (8), 5720-5732, 1982
4191982
Polycrystalline silicon thin film transistors
SD Brotherton
Semiconductor science and technology 10 (6), 721, 1995
4161995
Excimer-laser-annealed poly-Si thin-film transistors
SD Brotherton, DJ McCulloch, JB Clegg, JP Gowers
IEEE Transactions on Electron Devices 40 (2), 407-413, 1993
2481993
Introduction to Thin Film Transistors
SD Brotherton
Introduction to Thin Film Transistors, 2013
197*2013
Deep levels of copper in silicon
SD Brotherton, JR Ayres, A Gill, HW Van Kesteren, F Greidanus
Journal of applied physics 62 (5), 1826-1832, 1987
1441987
Influence of melt depth in laser crystallized poly-Si thin film transistors
SD Brotherton, DJ McCulloch, JP Gowers, JR Ayres, MJ Trainor
Journal of applied physics 82 (8), 4086-4094, 1997
1371997
Iron and the iron‐boron complex in silicon
SD Brotherton, P Bradley, A Gill
Journal of applied physics 57 (6), 1941-1943, 1985
1291985
Electrical properties of platinum in silicon
SD Brotherton, P Bradley, J Bicknell
Journal of Applied Physics 50 (5), 3396-3403, 1979
1161979
Laser crystallised poly-Si TFTs for AMLCDs
SD Brotherton, JR Ayres, MJ Edwards, CA Fisher, C Glaister, JP Gowers, ...
Thin Solid Films 337 (1-2), 188-195, 1999
1051999
Defects and leakage currents in BF2‐implanted preamorphized silicon
SD Brotherton, JP Gowers, ND Young, JB Clegg, JR Ayres
Journal of Applied Physics 60 (10), 3567-3575, 1986
951986
Analysis of drain field and hot carrier stability of poly-Si thin film transistors
JR Ayres, SD Brotherton, DJ McCulloch, MJ Trainor
Japanese journal of applied physics 37 (4R), 1801, 1998
931998
Surface roughness effects in laser crystallized polycrystalline silicon
DJ McCulloch, SD Brotherton
Applied physics letters 66 (16), 2060-2062, 1995
921995
The electrical properties of sulphur in silicon
SD Brotherton, MJ King, GJ Parker
Journal of Applied Physics 52 (7), 4649-4658, 1981
881981
Electron and hole capture at Au and Pt centers in silicon
SD Brotherton, JE Lowther
Physical Review Letters 44 (9), 606, 1980
871980
The electron capture cross section and energy level of the gold acceptor center in silicon
SD Brotherton, J Bicknell
Journal of Applied Physics 49 (2), 667-671, 1978
841978
Modeling of laser-annealed polysilicon TFT characteristics
GA Armstrong, S Uppal, SD Brotherton, JR Ayres
IEEE Electron Device Letters 18 (7), 315-318, 1997
771997
Characterisation of low temperature poly-Si thin film transistors
SD Brotherton, JR Ayres, ND Young
Solid-state electronics 34 (7), 671-679, 1991
771991
Characterisation of poly-Si TFTs in directionally solidified SLS Si
JSI SD Brotherton, MA Crowder, AB Limanov, B Turk
Asia Display/IDW '01, 387, 2001
76*2001
Electrical observation of the Au‐Fe complex in silicon
SD Brotherton, P Bradley, A Gill, ER Weber
Journal of applied physics 55 (4), 952-956, 1984
731984
An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2
YT Yeow, DR Lamb, SD Brotherton
Journal of Physics D: Applied Physics 8 (13), 1495, 1975
681975
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