Segui
Yang Wenbing
Yang Wenbing
Email verificata su ucla.edu
Titolo
Citata da
Citata da
Anno
Fused silver nanowires with metal oxide nanoparticles and organic polymers for highly transparent conductors
R Zhu, CH Chung, KC Cha, W Yang, YB Zheng, H Zhou, TB Song, ...
ACS nano 5 (12), 9877-9882, 2011
4352011
CZTS nanocrystals: a promising approach for next generation thin film photovoltaics
H Zhou, WC Hsu, HS Duan, B Bob, W Yang, TB Song, CJ Hsu, Y Yang
Energy & Environmental Science 6 (10), 2822-2838, 2013
4252013
Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
KJ Kanarik, J Marks, H Singh, S Tan, A Kabansky, W Yang, KIM Taeseung, ...
US Patent 9,576,811, 2017
3022017
The role of sulfur in solution‐processed Cu2ZnSn (S, Se) 4 and its effect on defect properties
HS Duan, W Yang, B Bob, CJ Hsu, B Lei, Y Yang
Advanced Functional Materials 23 (11), 1466-1471, 2013
2452013
Novel solution processing of high‐efficiency earth‐abundant Cu2ZnSn (S, Se) 4 solar cells
W Yang, HS Duan, B Bob, H Zhou, B Lei, CH Chung, SH Li, WW Hou, ...
Advanced Materials 24 (47), 6323-6329, 2012
2362012
Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals
H Zhou, TB Song, WC Hsu, S Luo, S Ye, HS Duan, CJ Hsu, W Yang, ...
Journal of the American Chemical Society 135 (43), 15998-16001, 2013
1712013
Atomic layer etching of tungsten for enhanced tungsten deposition fill
CS Lai, KJ Kanarik, S Tan, A Chandrashekar, TT Su, W Yang, M Wood, ...
US Patent 9,972,504, 2018
1682018
Predicting synergy in atomic layer etching
KJ Kanarik, S Tan, W Yang, T Kim, T Lill, A Kabansky, EA Hudson, T Ohba, ...
Journal of Vacuum Science & Technology A 35 (5), 2017
1112017
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks, T Lill
US Patent 9,806,252, 2017
1022017
The Development of Hydrazine‐Processed Cu(In,Ga)(Se,S)2 Solar Cells
B Bob, B Lei, CH Chung, W Yang, WC Hsu, HS Duan, WWJ Hou, SH Li, ...
Advanced Energy Materials 2 (5), 504-522, 2012
862012
Growth mechanisms of co‐evaporated kesterite: a comparison of Cu‐rich and Zn‐rich composition paths
WC Hsu, I Repins, C Beall, C DeHart, B To, W Yang, Y Yang, R Noufi
Progress in Photovoltaics: Research and Applications 22 (1), 35-43, 2014
852014
Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach
KN Tomihito Ohba, Wenbing Yang, Samantha Tan, Keren J. Kanarik
Japanese Journal of Applied Physics 56 (06HB06), 2017
722017
Molecular Solution Approach To Synthesize Electronic Quality Cu2ZnSnS4 Thin Films
W Yang, HS Duan, KC Cha, CJ Hsu, WC Hsu, H Zhou, B Bob, Y Yang
Journal of the American Chemical Society 135 (18), 6915-6920, 2013
712013
Reaction pathways for the formation of Cu 2 ZnSn (Se, S) 4 absorber materials from liquid-phase hydrazine-based precursor inks
WC Hsu, B Bob, W Yang, CH Chung, Y Yang
Energy & Environmental Science 5 (9), 8564-8571, 2012
682012
Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics
CJ Hsu, HS Duan, W Yang, H Zhou, Y Yang
Advanced Energy Materials 4 (6), 1301287, 2014
672014
Synthesis of bimetallic Pt-Pd core-shell nanocrystals and their high electrocatalytic activity modulated by Pd shell thickness
Y Li, ZW Wang, CY Chiu, L Ruan, W Yang, Y Yang, RE Palmer, Y Huang
Nanoscale 4 (3), 845-851, 2012
652012
Spatial Element Distribution Control in a Fully Solution-Processed Nanocrystals-Based 8.6% Cu2ZnSn(S,Se)4 Device
WC Hsu, H Zhou, S Luo, TB Song, YT Hsieh, HS Duan, S Ye, W Yang, ...
ACS nano 8 (9), 9164-9172, 2014
632014
Identification of the Molecular Precursors for Hydrazine Solution Processed CuIn(Se,S)2 Films and Their Interactions
CH Chung, SH Li, B Lei, W Yang, WW Hou, B Bob, Y Yang
Chemistry of Materials 23 (4), 964-969, 2011
622011
Highly selective directional atomic layer etching of silicon
S Tan, W Yang, KJ Kanarik, T Lill, V Vahedi, J Marks, RA Gottscho
ECS Journal of Solid State Science and Technology 4 (6), N5010, 2015
572015
Method to etch non-volatile metal materials
SSH Tan, W Yang, M Shen, RP Janek, J Marks, H Singh, T Lill
US Patent 9,257,638, 2016
532016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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