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David Nminibapiel
David Nminibapiel
Affiliazione sconosciuta
Email verificata su intel.com
Titolo
Citata da
Citata da
Anno
Resistive Switching Nanodevices Based on Metal–Organic Frameworks
Z Wang, D Nminibapiel, P Shrestha, J Liu, W Guo, PG Weidler, ...
ChemNanoMat 2 (1), 67-73, 2016
772016
Physical analysis of VO2 films grown by atomic layer deposition and RF magnetron sputtering
M Tangirala, K Zhang, D Nminibapiel, V Pallem, C Dussarrat, W Cao, ...
ECS Journal of Solid State Science and Technology 3 (6), N89-N94, 2014
382014
Synthesis of VO2 Thin Films by Atomic Layer Deposition with TEMAV as Precursor
K Zhang, M Tangirala, D Nminibapiel, W Cao, V Pallem, C Dussarrat, ...
ECS Transactions 50 (13), 175-182, 2013
382013
Characteristics of resistive memory read fluctuations in endurance cycling
DM Nminibapiel, D Veksler, PR Shrestha, JH Kim, JP Campbell, JT Ryan, ...
IEEE Electron Device Letters 38 (3), 326-329, 2017
222017
ALD growth of PbTe and PbSe superlattices for thermoelectric applications
K Zhang, ADR Pillai, D Nminibapiel, M Tangirala, VS Chakravadhanula, ...
ECS Transactions 58 (10), 131-139, 2013
222013
Analysis and Control of RRAM Overshoot Current
PR Shrestha, DM Nminibapiel, JP Campbell, JT Ryan, D Veksler, ...
IEEE Transactions on Electron Devices 65 (1), 108-114, 2018
202018
Atomic layer deposition of nanolaminate structures of alternating PbTe and PbSe thermoelectric films
K Zhang, ADR Pillai, K Bollenbach, D Nminibapiel, W Cao, H Baumgart, ...
ECS Journal of Solid State Science and Technology 3 (6), P207-P212, 2014
202014
Impact of RRAM read fluctuations on the program-verify approach
DM Nminibapiel, D Veksler, PR Shrestha, JP Campbell, JT Ryan, ...
IEEE Electron Device Letters 38 (6), 736-739, 2017
192017
Growth of Nanolaminates of Thermoelectric Bi2Te3/Sb2Te3 by Atomic Layer Deposition
D Nminibapiel, K Zhang, M Tangirala, H Baumgart, ...
ECS Journal of Solid State Science and Technology 3 (4), P95-P100, 2014
182014
Toward reliable RRAM performance: macro-and micro-analysis of operation processes
G Bersuker, D Veksler, DM Nminibapiel, PR Shrestha, JP Campbell, ...
Journal of Computational Electronics 16 (4), 1085-1094, 2017
172017
Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance
DJ McCrory, PM Lenahan, DM Nminibapiel, D Veksler, JT Ryan, ...
IEEE Transactions on Nuclear Science, 2018
142018
Energy control paradigm for compliance-free reliable operation of RRAM
PR Shrestha, D Nminibapiel, JH Kim, JP Campbell, KP Cheung, S Deora, ...
Reliability Physics Symposium, 2014 IEEE International, MY. 10.1-MY. 10.4, 2014
122014
Dependence of the filament resistance on the duration of current overshoot
P Shrestha, D Nminibapiel, JP Campbell, KP Cheung, H Baumgart, ...
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International …, 2013
102013
Fabrication of Sb2Te3 and Bi2Te3 multilayer composite films by Atomic Layer Deposition
K Zhang, D Nminibapiel, M Tangirala, H Baumgart, V Kochergin
ECS Transactions 50 (13), 3-9, 2013
102013
Atomic layer deposition of antimony telluride thin films using (Me3Si) 2Te with SbCl3 as precursors
D Gu, D Nminibapiel, H Baumgart, H Robinson, V Kochergin
ECS Transactions 41 (2), 255-261, 2011
102011
Atomic Layer Deposition of Antimony Telluride and Bismuth Telluride using (Me3Si) 2Te with SbCl3 and Trimethylbismuth as Precursors
D Gu, D Nminibapiel, H Baumgart, H Robinson, V Kochergin
Meeting Abstracts, 1871-1871, 2011
10*2011
Synthesis and characterization of PbTe thin films by atomic layer deposition
K Zhang, AD Pillai, M Tangirala, D Nminibapiel, K Bollenbach, W Cao, ...
physica status solidi (a) 211 (6), 1329-1333, 2014
82014
Rapid and Accurate Measurements
JH Kim, PR Shrestha, JP Campbell, JT Ryan, D Nminibapiel, JJ Kopanski, ...
IEEE transactions on electron devices 63 (10), 3851-3856, 2016
72016
Pulsed IV on TFETs: Modeling and Measurements
Q Smets, A Verhulst, JH Kim, JP Campbell, D Nminibapiel, D Veksler, ...
IEEE Transactions on Electron Devices 64 (4), 1489-1497, 2017
62017
Accurate RRAM transient currents during forming
P Shrestha, D Nminibapiel, JP Campbell, JH Kim, C Vaz, KP Cheung, ...
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of …, 2014
62014
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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