Rong Jiang
Rong Jiang
Email verificata su vanderbilt.edu
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Citata da
Citata da
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Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
562015
Charge Trapping in Al2O3/-Ga2O3-Based MOS Capacitors
MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
352018
Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs
R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
242016
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
222018
Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors
X Huang, C Wu, H Lu, F Ren, D Chen, R Jiang, R Zhang, Y Zheng, Q Xu
Solid-state electronics 86, 41-44, 2013
222013
1/ Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations
P Wang, R Jiang, J Chen, EX Zhang, MW McCurdy, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 64 (1), 181-189, 2016
202016
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
R Jiang, X Shen, J Chen, GX Duan, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 109 (2), 023511, 2016
162016
Understanding charge collection mechanisms in InGaAs FinFETs using high-speed pulsed-laser transient testing with tunable wavelength
K Ni, AL Sternberg, EX Zhang, JA Kozub, R Jiang, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 64 (8), 2069-2078, 2017
152017
Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes
J Rong, L Hai, C Dun-Jun, R Fang-Fang, Y Da-Wei, Z Rong, Z You-Dou
Chinese Physics B 22 (4), 047805, 2013
142013
Capacitance–frequency estimates of border-trap densities in multifin MOS capacitors
SE Zhao, R Jiang, EX Zhang, W Liao, C Liang, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 65 (1), 175-183, 2017
132017
Radiation-induced charge trapping and low-frequency noise of graphene transistors
P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017
112017
Total ionizing dose (TID) effects in ultra-thin body Ge-on-Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel
S Ren, MA Bhuiyan, H Wu, R Jiang, K Ni, EX Zhang, RA Reed, ...
IEEE Transactions on Nuclear Science 64 (1), 176-180, 2016
92016
Total-Ionizing-Dose responses of GaN-Based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric
MA Bhuiyan, H Zhou, SJ Chang, X Lou, X Gong, R Jiang, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 46-52, 2017
82017
Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si
SE Zhao, S Bonaldo, P Wang, R Jiang, H Gong, EX Zhang, N Waldron, ...
IEEE Transactions on Nuclear Science 66 (7), 1599-1605, 2019
72019
Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform
PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ...
IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018
72018
Low-frequency noise and defects in copper and ruthenium resistors
DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ...
Applied Physics Letters 114 (20), 203501, 2019
52019
Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications
R Jiang, EX Zhang, SE Zhao, DM Fleetwood, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 65 (1), 78-83, 2017
52017
Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs
R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 66 (1), 170-176, 2018
42018
Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes
R Jiang, D Yan, H Lu, R Zhang, D Chen, Y Zheng
Chinese science bulletin 59 (12), 1276-1279, 2014
42014
Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K
TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019
32019
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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