Antonio Polimeni
Antonio Polimeni
Dipartimento di Fisica, Sapienza Universitā di Roma
Verified email at roma1.infn.it - Homepage
TitleCited byYear
Temperature dependence of the optical properties of self-organized quantum dots
A Polimeni, A Patane, M Henini, L Eaves, PC Main
Physical Review B 59 (7), 5064, 1999
2511999
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel
Applied Physics Letters 77 (18), 2870-2872, 2000
1432000
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in
F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B 73 (7), 073201, 2006
1342006
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ...
Applied physics letters 73 (8), 1092-1094, 1998
1161998
Trends in the electronic structure of dilute nitride alloys
EP O'Reilly, A Lindsay, PJ Klar, A Polimeni, M Capizzi
Semiconductor science and technology 24 (3), 033001, 2009
1122009
Effect of hydrogen on the electronic properties of quantum wells
A Polimeni, HM Bissiri, M Capizzi, M Fischer, M Reinhardt, A Forchel
Physical Review B 63 (20), 201304, 2001
1002001
Influence of bismuth incorporation on the valence and conduction band edges of
G Pettinari, A Polimeni, M Capizzi, JH Blokland, PCM Christianen, ...
Applied Physics Letters 92 (26), 262105, 2008
942008
Effect of nitrogen on the temperature dependence of the energy gap in single quantum wells
A Polimeni, M Capizzi, M Geddo, M Fischer, M Reinhardt, A Forchel
Physical Review B 63 (19), 195320, 2001
912001
Early manifestation of localization effects in diluted Ga (AsN)
F Masia, A Polimeni, G Baldassarri Höger von Högersthal, M Bissiri, ...
Applied physics letters 82 (25), 4474-4476, 2003
702003
Linewidth analysis of the photoluminescence of As/GaAs quantum wells (x=0.09, 0.18, 1.0)
A Patanč, A Polimeni, M Capizzi, F Martelli
Physical Review B 52 (4), 2784, 1995
691995
Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
A Polimeni, A Patane, M Capizzi, F Martelli, L Nasi, G Salviati
Physical Review B 53 (8), R4213, 1996
671996
Piezoelectric effects in self-assembled quantum dots grown on GaAs substrates
A Patane, A Levin, A Polimeni, F Schindler, PC Main, L Eaves, M Henini
Applied Physics Letters 77 (19), 2979-2981, 2000
642000
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures
PN Brunkov, AR Kovsh, VM Ustinov, YG Musikhin, NN Ledentsov, ...
Journal of electronic materials 28 (5), 486-490, 1999
631999
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
G Baldassarri H. v. H, M Bissiri, A Polimeni, M Capizzi, M Fischer, ...
Applied Physics Letters 78 (22), 3472-3474, 2001
612001
Nitrogen-hydrogen complex in revealed by x-ray absorption spectroscopy
G Ciatto, F Boscherini, AA Bonapasta, F Filippone, A Polimeni, M Capizzi
Physical Review B 71 (20), 201301, 2005
572005
Optical properties and device applications of (InGa)As self-assembled quantum dots grown on GaAs substrates
A Polimeni, M Henini, A Patane, L Eaves, PC Main, G Hill
Applied physics letters 73 (10), 1415-1417, 1998
571998
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in
G Pettinari, F Masia, A Polimeni, M Felici, A Frova, M Capizzi, A Lindsay, ...
Physical Review B 74 (24), 245202, 2006
522006
Hydrogen-induced improvements in optical quality of GaNAs alloys
IA Buyanova, M Izadifard, WM Chen, A Polimeni, M Capizzi, HP Xin, ...
Applied physics letters 82 (21), 3662-3664, 2003
522003
In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors
M Felici, A Polimeni, G Salviati, L Lazzarini, N Armani, F Masia, M Capizzi, ...
Advanced Materials 18 (15), 1993-1997, 2006
512006
Nitrogen passivation induced by atomic hydrogen: The case
A Polimeni, M Bissiri, M Felici, M Capizzi, IA Buyanova, WM Chen, HP Xin, ...
Physical Review B 67 (20), 201303, 2003
512003
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