The Effect of an Fe-doped GaN Buffer on off -State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate YC Choi, M Pophristic, HY Cha, B Peres, MG Spencer, LF Eastman
IEEE transactions on Electron devices 53 (12), 2926-2931, 2006
128 2006 High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- W Choi, O Seok, H Ryu, HY Cha, KS Seo
IEEE Electron Device Letters 35 (2), 175-177, 2013
125 2013 Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode JG Lee, BR Park, CH Cho, KS Seo, HY Cha
IEEE Electron Device Letters 34 (2), 214-216, 2013
117 2013 Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
106 2008 Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ...
Nanotechnology 17 (5), 1264, 2006
89 2006 Improvement of W Choi, H Ryu, N Jeon, M Lee, HY Cha, KS Seo
IEEE Electron Device Letters 35 (1), 30-32, 2013
77 2013 Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs HY Cha, CI Thomas, G Koley, LF Eastman, MG Spencer
IEEE transactions on electron devices 50 (7), 1569-1574, 2003
74 2003 Electrical and optical modeling of 4H-SiC avalanche photodiodes HY Cha, PM Sandvik
Japanese Journal of Applied Physics 47 (7R), 5423, 2008
70 2008 State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha
Applied Physics Express 5 (6), 066502, 2012
65 2012 High-Quality ICPCVD BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha
IEEE Electron Device Letters 34 (3), 354-356, 2013
63 2013 4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency H Liu, D Mcintosh, X Bai, H Pan, M Liu, JC Campbell, HY Cha
IEEE photonics technology letters 20 (18), 1551-1553, 2008
62 2008 Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors J Hwang, WJ Schaff, BM Green, H Cha, LF Eastman
Solid-State Electronics 48 (2), 363-366, 2004
59 2004 Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha
IEEE Electron Device Letters 38 (8), 1090-1093, 2017
52 2017 Gallium nitride nanowire nonvolatile memory device HY Cha, H Wu, S Chae, MG Spencer
Journal of applied physics 100 (2), 2006
52 2006 Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection HY Cha, S Soloviev, S Zelakiewicz, P Waldrab, PM Sandvik
IEEE Sensors Journal 8 (3), 233-237, 2008
49 2008 Simulation study on breakdown behavior of field-plate SiC MESFETs HY Cha, YC Choi, LF Eastman, MG Spencer
International journal of high speed electronics and systems 14 (03), 884-889, 2004
47 2004 High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors JG Lee, HS Kim, KS Seo, CH Cho, HY Cha
Solid-State Electronics 122, 32-36, 2016
46 2016 High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance YC Choi, M Pophristic, B Peres, HY Cha, MG Spencer, LF Eastman
Semiconductor science and technology 22 (5), 517, 2007
41 2007 Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate JH Choi, CH Cho, HY Cha
Results in Physics 9, 1170-1171, 2018
37 2018 SiNx prepassivation of AlGaN/GaN high-electron-mobility transistors using remote-mode plasma-enhanced chemical vapor deposition JC Her, HJ Cho, CS Yoo, HY Cha, JE Oh, KS Seo
Japanese Journal of Applied Physics 49 (4R), 041002, 2010
37 2010 