| Experimental demonstration of ferroelectric spiking neurons for unsupervised clustering Z Wang, B Crafton, J Gomez, R Xu, A Luo, Z Krivokapic, L Martin, S Datta, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2018 | 66 | 2018 |
| Ferroelectric oscillators and their coupled networks Z Wang, S Khandelwal, AI Khan IEEE Electron Device Letters 38 (11), 1614-1617, 2017 | 56 | 2017 |
| Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu Nanotechnology 31 (50), 505707, 2020 | 53 | 2020 |
| Neuro-mimetic dynamics of a ferroelectric FET-based spiking neuron Y Fang, J Gomez, Z Wang, S Datta, AI Khan, A Raychowdhury IEEE Electron Device Letters 40 (7), 1213-1216, 2019 | 44 | 2019 |
| Drain–erase scheme in ferroelectric field-effect transistor—Part I: Device characterization P Wang, Z Wang, W Shim, J Hur, S Datta, AI Khan, S Yu IEEE Transactions on Electron Devices 67 (3), 955-961, 2020 | 38 | 2020 |
| Drain-erase scheme in ferroelectric field effect transistor—Part II: 3-D-NAND architecture for in-memory computing P Wang, W Shim, Z Wang, J Hur, S Datta, AI Khan, S Yu IEEE Transactions on Electron Devices 67 (3), 962-967, 2020 | 37 | 2020 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 27 | 2022 |
| Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals Z Wang, AA Gaskell, M Dopita, D Kriegner, N Tasneem, J Mack, ... Applied Physics Letters 112 (22), 2018 | 27 | 2018 |
| Investigating ferroelectric minor loop dynamics and history effect—Part I: Device characterization P Wang, Z Wang, X Sun, J Hur, S Datta, AI Khan, S Yu IEEE Transactions on Electron Devices 67 (9), 3592-3597, 2020 | 26 | 2020 |
| The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ... IEEE Electron Device Letters 42 (8), 1156-1159, 2021 | 24 | 2021 |
| Cryogenic characterization of a ferroelectric field-effect-transistor Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan Applied Physics Letters 116 (4), 2020 | 24 | 2020 |
| A swarm optimization solver based on ferroelectric spiking neural networks Y Fang, Z Wang, J Gomez, S Datta, AI Khan, A Raychowdhury Frontiers in neuroscience 13, 458889, 2019 | 24 | 2019 |
| Investigating ferroelectric minor loop dynamics and history effect—Part II: Physical modeling and impact on neural network training P Wang, Z Wang, X Sun, J Hur, S Datta, AI Khan, S Yu IEEE Transactions on Electron Devices 67 (9), 3598-3604, 2020 | 20 | 2020 |
| Ferroelectric relaxation oscillators and spiking neurons Z Wang, AI Khan IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 20 | 2019 |
| Atomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2) S Lombardo, C Nelson, K Chae, S Reyes-Lillo, M Tian, T Nujhat, Z Wang, ... 2020 Symposium on VLSI Technology, 2020 | 17 | 2020 |
| Depolarization Field Induced Instability of Polarization States in HfO2 Based Ferroelectric FET Z Wang, MM Islam, P Wang, S Deng, S Yu, AI Khan, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2020 | 16 | 2020 |
| Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu 2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020 | 14 | 2020 |
| Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K J Hur, YC Luo, Z Wang, S Lombardo, AI Khan, S Yu IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 13 | 2021 |
| Standby bias improvement of read after write delay in ferroelectric field effect transistors Z Wang, N Tasneem, J Hur, H Chen, S Yu, W Chern, A Khan 2021 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2021 | 12 | 2021 |
| Trap capture and emission dynamics in ferroelectric field-effect transistors and their impact on device operation and reliability N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021 | 11 | 2021 |
Asif KhanAssistant Professor, ECE and MSE, Georgia TechVerified email at ece.gatech.edu
