| Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture JT Leonard, DA Cohen, BP Yonkee, RM Farrell, T Margalith, S Lee, ... Applied Physics Letters 107 (1), 2015 | 106 | 2015 |
| GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition SG Lee, CA Forman, C Lee, J Kearns, EC Young, JT Leonard, DA Cohen, ... Applied Physics Express 11 (6), 062703, 2018 | 71 | 2018 |
| Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ... Applied Physics Letters 112 (11), 2018 | 65 | 2018 |
| Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture JT Leonard, BP Yonkee, DA Cohen, L Megalini, S Lee, JS Speck, ... Applied Physics Letters 108 (3), 2016 | 55 | 2016 |
| Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts SG Lee, CA Forman, J Kearns, JT Leonard, DA Cohen, S Nakamura, ... Optics Express 27 (22), 31621-31628, 2019 | 43 | 2019 |
| Dynamic characteristics of 410 nm semipolar (202 1) III-nitride laser diodes with a modulation bandwidth of over 5 GHz C Lee, C Zhang, DL Becerra, S Lee, CA Forman, SH Oh, RM Farrell, ... Applied Physics Letters 109 (10), 2016 | 41 | 2016 |
| Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser SG Lee, S Mishkat-Ul-Masabih, JT Leonard, DF Feezell, DA Cohen, ... Applied Physics Express 10 (1), 011001, 2016 | 31 | 2016 |
| Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers CA Forman, SG Lee, EC Young, JA Kearns, DA Cohen, JT Leonard, ... Gallium Nitride Materials and Devices XIII 10532, 94-104, 2018 | 17 | 2018 |
| High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication C Lee, C Zhang, D Becerra, S Lee, SH Oh, RM Farrell, JS Speck, ... 2016 IEEE Photonics Conference (IPC), 809-810, 2016 | 7 | 2016 |
| Blue semipolar III-nitride vertical-cavity surface-emitting lasers JA Kearns, NC Palmquist, J Back, SG Lee, DA Cohen, SP DenBaars, ... Gallium Nitride Materials and Devices XV 11280, 45-53, 2020 | 2 | 2020 |
| Nonpolar GaN-based vertical-cavity surface-emitting lasers CA Forman, JT Leonard, EC Young, S Lee, DA Cohen, BP Yonkee, ... 2016 International Semiconductor Laser Conference (ISLC), 1-2, 2016 | 2 | 2016 |
| High-speed performance of III-nitride 410 nm ridge laser diode on (2021) plane for visible light communication C Lee, C Zhang, DL Becerra, S Lee, RM Farrell, JS Speck, S Nakamura, ... 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
| A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact SG Lee, CA Forman, C Lee, J Kearns, JT Leonard, DA Cohen, JS Speck, ... CLEO: Science and Innovations, SF1G. 7, 2018 | | 2018 |
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraEmail verificata su engineering.ucsb.edu
