Quantum Dot Heterostructures D Bimberg, M Grundmann, D, NN Ledentsov
Wiley, Chichester, 1998
4233 1998 Low threshold, large T0 injection laser emission from (InGa)As quantum dots N Kirstaedter, NN Ledentsov, M Grundmann, D Bimberg, ѴM Ustinov, ...
Electron. Lett 30, 1416, 1994
1031 1994 Ultranarrow luminescence lines from single quantum dots M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
901 1995 Spontaneous ordering of arrays of coherent strained islands VA Shchukin, NN Ledentsov, PS Kop'ev, D Bimberg
Physical review letters 75 (16), 2968, 1995
740 1995 InGaAs-GaAs quantum-dot lasers D Bimberg, N Kirstaedter, NN Ledentsov, ZI Alferov, PS Kop'Ev, ...
IEEE Journal of selected topics in quantum electronics 3 (2), 196-205, 1997
648 1997 Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth NN Ledentsov, VA Shchukin, ME Grundmann, N Kirstaedter, J Böhrer, ...
Physical Review B 54 (12), 8743, 1996
614 1996 Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ...
Physical Review B 56 (16), 10435, 1997
586 1997 InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
461 1999 Quantum dot heterostructures: fabrication, properties, lasers NN Ledentsov, VM Ustinov, VA Shchukin, PS Kop’Ev, ZI Alferov, ...
Semiconductors 32 (4), 343-365, 1998
435 1998 Epitaxy of Nanostructures VA Shchukin, NN Ledentsov, D Bimberg
Springer, 2004
429 2004 Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied physics letters 69 (9), 1226-1228, 1996
381 1996 Radiative recombination in type‐II GaSb/GaAs quantum dots F Hatami, NN Ledentsov, M Grundmann, J Böhrer, F Heinrichsdorff, ...
Applied physics letters 67 (5), 656-658, 1995
380 1995 Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces R Nötzel, NN Ledentsov, L Däweritz, M Hohenstein, K Ploog
Physical review letters 67 (27), 3812, 1991
337 1991 InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ...
Electronics Letters 36 (16), 1384-1385, 2000
323 2000 Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ...
Applied Physics Letters 68 (3), 361-363, 1996
323 1996 Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ...
Solid-State Electronics 40 (1-8), 785-798, 1996
301 1996 Semiconductor quantum-wire structures directly grown on high-index surfaces R Nötzel, NN Ledentsov, L Däweritz, K Ploog, M Hohenstein
Physical Review B 45 (7), 3507, 1992
288 1992 Carrier dynamics in type-II GaSb/GaAs quantum dots F Hatami, M Grundmann, NN Ledentsov, F Heinrichsdorff, R Heitz, ...
Physical Review B 57 (8), 4635, 1998
279 1998 Excited states in self‐organized InAs/GaAs quantum dots: theory and experiment M Grundmann, NN Ledentsov, O Stier, D Bimberg, VM Ustinov, PS Kop’ev, ...
Applied physics letters 68 (7), 979-981, 1996
278 1996 The role of Auger recombination in the temperature-dependent output characteristics S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ...
Applied Physics Letters 85 (22), 5164-5166, 2004
267 2004 