Follow
Chowdhury Madhumita
Chowdhury Madhumita
University of Toledo
Verified email at finra.org
Title
Cited by
Cited by
Year
A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen
M Chowdhury, B Long, R Jha, V Devabhaktuni
Solid-state electronics 68, 1-3, 2012
72012
NiOx based resistive random access memories
M Chowdhury
University of Toledo, 2012
2012
CHARGE CONDUCTION MECHANISM AND MODELING IN HIGH-K DIELECTRIC-BASED MOS CAPACITORS
M Chowdhury, B Long, R Jha, V Devabhaktuni
The system can't perform the operation now. Try again later.
Articles 1–3