Rafael Roldán
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Local Strain Engineering in Atomically Thin MoS2
A Castellanos-Gomez, R Roldán, E Cappelluti, M Buscema, F Guinea, ...
Nano letters 13 (11), 5361-5366, 2013
Strain engineering in semiconducting two-dimensional crystals
R Roldán, A Castellanos-Gomez, E Cappelluti, F Guinea
Journal of Physics: Condensed Matter 27 (31), 313201, 2015
Plasmons and screening in monolayer and multilayer black phosphorus
T Low, R Roldán, H Wang, F Xia, P Avouris, LM Moreno, F Guinea
Physical review letters 113 (10), 106802, 2014
Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS 2
E Cappelluti, R Roldán, JA Silva-Guillén, P Ordejón, F Guinea
Physical Review B 88 (7), 075409, 2013
Novel effects of strains in graphene and other two dimensional materials
B Amorim, A Cortijo, F De Juan, AG Grushin, F Guinea, A Gutiérrez-Rubio, ...
Physics Reports 617, 1-54, 2016
Electronic properties of single‐layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)
R Roldán, JA Silva‐Guillén, MP López‐Sancho, F Guinea, E Cappelluti, ...
Annalen der Physik 526 (9-10), 347-357, 2014
Strong modulation of optical properties in black phosphorus through strain-engineered rippling
J Quereda, P San-Jose, V Parente, L Vaquero-Garzon, ...
Nano letters 16 (5), 2931-2937, 2016
Spin-orbit-mediated spin relaxation in monolayer MoS
H Ochoa, R Roldán
Physical Review B 87 (24), 245421, 2013
Dielectric screening in atomically thin boron nitride nanosheets
LH Li, EJG Santos, T Xing, E Cappelluti, R Roldán, Y Chen, K Watanabe, ...
Nano letters 15 (1), 218-223, 2015
Theory of strain in single-layer transition metal dichalcogenides
H Rostami, R Roldán, E Cappelluti, R Asgari, F Guinea
Physical Review B 92 (19), 195402, 2015
Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
A Castellanos-Gomez, E Cappelluti, R Roldán, N Agraït, F Guinea, ...
arXiv preprint arXiv:1211.0574, 2012
Theory of 2D crystals: graphene and beyond
R Roldán, L Chirolli, E Prada, JA Silva-Guillén, P San-Jose, F Guinea
Chemical Society Reviews 46 (15), 4387-4399, 2017
Landau level spectrum of ABA-and ABC-stacked trilayer graphene
S Yuan, R Roldán, MI Katsnelson
Physical Review B 84 (12), 125455, 2011
Effect of point defects on the optical and transport properties of and
S Yuan, R Roldán, MI Katsnelson, F Guinea
Physical Review B 90 (4), 041402, 2014
Collective modes of doped graphene and a standard two-dimensional electron gas in a strong magnetic field: Linear magnetoplasmons versus magnetoexcitons
R Roldán, JN Fuchs, MO Goerbig
Physical Review B 80 (8), 085408, 2009
Piezoelectricity in monolayer hexagonal boron nitride
P Ares, T Cea, M Holwill, YB Wang, R Roldán, F Guinea, DV Andreeva, ...
Advanced Materials 32 (1), 1905504, 2020
Interactions and superconductivity in heavily doped MoS
R Roldán, E Cappelluti, F Guinea
Physical Review B 88 (5), 054515, 2013
Suppression of anharmonicities in crystalline membranes by external strain
R Roldán, A Fasolino, KV Zakharchenko, MI Katsnelson
Physical Review B 83 (17), 174104, 2011
Excitation spectrum and high-energy plasmons in single-layer and multilayer graphene
S Yuan, R Roldán, MI Katsnelson
Physical Review B 84 (3), 035439, 2011
How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin–Orbit Splitting, and Strain
B Schuler, JH Lee, C Kastl, KA Cochrane, CT Chen, S Refaely-Abramson, ...
ACS nano 13 (9), 10520-10534, 2019
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