Tanweer Ahmed
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A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing
T Paul, T Ahmed, KK Tiwari, CS Thakur, A Ghosh
2D Materials 6 (4), 045008, 2019
Number‐Resolved Single‐Photon Detection with Ultralow Noise van der Waals Hybrid
K Roy, T Ahmed, H Dubey, TP Sai, R Kashid, S Maliakal, K Hsieh, ...
Advanced Materials 30 (2), 1704412, 2018
Thermodynamically stable octahedral MoS2 in van der Waals hetero-bilayers
T Ahmed, MH Naik, S Kumari, SP Suman, R Debnath, S Dutta, ...
2D Materials 6 (4), 041002, 2019
Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS2 van der Waals heterostructures
T Ahmed, K Roy, S Kakkar, A Pradhan, A Ghosh
2D Materials 7 (2), 025043, 2020
A generic method to control hysteresis and memory effect in Van der Waals hybrids
T Ahmed, S Islam, T Paul, N Hariharan, S Elizabeth, A Ghosh
Materials Research Express 7 (1), 014004, 2020
Optimising graphene visibility in van der Waals heterostructures
TS Menon, S Mishra, VC Antony, K Dixit, S Kakkar, T Ahmed, S Islam, ...
Nanotechnology 30 (39), 395704, 2019
2D van der Waals Hybrid: Structures, Properties and Devices
MA Aamir, T Ahmed, K Hsieh, S Islam, P Karnatak, R Kashid, ...
2D Inorganic Materials Beyond Graphene, 169-238, 2017
Atomically-smooth single-crystalline VO2 (101) thin films with sharp metal-insulator transition
D Mondal, SR Mahapatra, T Ahmed, SK Podapangi, A Ghosh, ...
Journal of Applied Physics 126 (21), 215302, 2019
Observation of inter-layer charge transmission resonance at optically excited graphene–TMDC interfaces
R Kashid, JK Mishra, A Pradhan, T Ahmed, S Kakkar, P Mundada, ...
APL Maretials 8, 091114, 2020
Thermal History-Dependent Current Relaxation in hBN/MoS2 van der Waals Dimers
T Ahmed, P Bellare, R Debnath, A Roy, N Ravishankar, A Ghosh
ACS nano 14 (5), 5909-5916, 2020
Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor
S Sharma, S Ghosh, T Ahmed, S Ray, S Islam, U Salzner, A Ghosh, ...
ACS Applied Electronic Materials 2 (1), 66-73, 2020
Van der Waals proximity induced structural polymorphism in atomically thin MoS2.
T Ahmed, M H Naik, S Kumari, UV Waghmare, M Jain, A Ghosh
APS 2018, T60. 217, 2018
Van der Waals epitaxy induced thermodynamically stable octahedral (1T’) phase in single layer MoS2
T Ahmed
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Articles 1–13