Andrea Scaccabarozzi
Andrea Scaccabarozzi
Solar Cell Laboratory, CESI S.p.A.
Verified email at cesi.it
Title
Cited by
Cited by
Year
Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon (111) under low-temperature conditions
YL Khung, SH Ngalim, A Scaccabarozzi, D Narducci
Beilstein journal of nanotechnology 6 (1), 19-26, 2015
332015
Evidence of two‐photon absorption in strain‐free quantum dot GaAs/AlGaAs solar cells
A Scaccabarozzi, S Adorno, S Bietti, M Acciarri, S Sanguinetti
physica status solidi (RRL)–Rapid Research Letters 7 (3), 173-176, 2013
292013
Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si
M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ...
ACS applied materials & interfaces 7 (34), 19219-19225, 2015
252015
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale
S Bietti, A Scaccabarozzi, C Frigeri, M Bollani, E Bonera, CV Falub, ...
Applied Physics Letters 103 (26), 262106, 2013
232013
Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays
F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand
Nano letters 18 (2), 701-708, 2018
202018
Determination of n-type doping level in single GaAs nanowires by cathodoluminescence
HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
192017
Self-assembly of quantum dot-disk nanostructures via growth kinetics control
C Somaschini, S Bietti, A Scaccabarozzi, E Grilli, S Sanguinetti
Crystal growth & design 12 (3), 1180-1184, 2012
152012
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
A Marzegalli, A Cortinovis, FB Basset, E Bonera, F Pezzoli, ...
Materials & Design 116, 144-151, 2017
142017
Kinetic growth mode of epitaxial GaAs on Si (001) micro-pillars
R Bergamaschini, S Bietti, A Castellano, C Frigeri, CV Falub, ...
Journal of Applied Physics 120 (24), 245702, 2016
122016
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
R Bergamaschini, M Salvalaglio, A Scaccabarozzi, F Isa, CV Falub, ...
Journal of Crystal Growth 440, 86-95, 2016
102016
Solar photovoltaics: a review
AL Donne, A Scaccabarozzi, S Tombolato, S Binetti, M Acciarri, A Abbotto
Reviews in Advanced Sciences and Engineering 2 (3), 170-178, 2013
82013
Integration of InGaP/GaAs/Ge triple‐junction solar cells on deeply patterned silicon substrates
A Scaccabarozzi, S Binetti, M Acciarri, G Isella, R Campesato, G Gori, ...
Progress in Photovoltaics: Research and Applications 24 (10), 1368-1377, 2016
52016
Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon
M Vettori, V Piazza, A Cattoni, A Scaccabarozzi, G Patriarche, P Regreny, ...
Nanotechnology 30 (8), 084005, 2018
42018
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates
A Scaccabarozzi, S Bietti, A Fedorov, H von Känel, L Miglio, S Sanguinetti
Journal of crystal growth 401, 559-562, 2014
32014
A Structural Characterization of GaAs MBE Grown on Si Pillars
C Frigeri, S Bietti, A Scaccabarozzi, R Bergamaschini, CV Falub, V Grillo, ...
Acta Physica Polonica A 125 (4), 986-990, 2014
32014
State of the Art and Perspectives of Inorganic Photovoltaics
A Le Donne, A Scaccabarozzi, S Tombolato, S Marchionna, P Garattini, ...
ISRN Renewable Energy 2013, 2013
32013
Evidence and control of unintentional As-rich shells in GaAs1–x P x nanowires
R de Lépinau, A Scaccabarozzi, G Patriarche, L Travers, S Collin, ...
Nanotechnology 30 (29), 294003, 2019
22019
III-V Nanowires on Silicon: a possible route to Si-based tandem solar cells
A Cattoni, A Scaccabarozzi, HL Chen, C Himwas, F Oehler, G Patriarche, ...
Optical Nanostructures and Advanced Materials for Photovoltaics, PM3A. 2, 2017
22017
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
A Ballabio, S Bietti, A Scaccabarozzi, L Esposito, S Vichi, A Fedorov, ...
Scientific reports 9 (1), 1-8, 2019
12019
Quantitative Assessment of Carrier Density by Cathodoluminescence (1): GaAs thin films and modeling
HL Chen, A Scaccabarozzi, R De Lépinau, F Oehler, A Lemaître, ...
arXiv preprint arXiv:1909.05598, 2019
12019
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