| AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity H Lu, B Hou, L Yang, X Niu, Z Si, M Zhang, M Wu, M Mi, Q Zhu, K Cheng, ... IEEE Transactions on Electron Devices 68 (7), 3308-3313, 2021 | 33 | 2021 |
| High RF performance GaN-on-Si HEMTs with passivation implanted termination H Lu, B Hou, L Yang, M Zhang, L Deng, M Wu, Z Si, S Huang, X Ma, ... IEEE Electron Device Letters 43 (2), 188-191, 2021 | 29 | 2021 |
| The DC performance and RF characteristics of GaN-based HEMTs improvement using graded AlGaN back barrier and Fe/C Co-doped buffer L Yang, B Hou, F Jia, M Zhang, M Wu, X Niu, H Lu, C Shi, M Mi, Q Zhu, ... IEEE Transactions on Electron Devices 69 (8), 4170-4174, 2022 | 16 | 2022 |
| Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation J Liu, M Mi, J Zhu, S Liu, P Wang, Y Zhou, Q Zhu, M Wu, H Lu, B Hou, ... IEEE Transactions on Electron Devices 69 (2), 631-636, 2021 | 10 | 2021 |
| Improved RF power performance of AlGaN/GaN HEMT using by Ti/Au/Al/Ni/Au shallow trench etching ohmic contact H Lu, X Ma, B Hou, L Yang, M Zhang, M Wu, Z Si, X Zhang, X Niu, Y Hao IEEE Transactions on Electron Devices 68 (10), 4842-4846, 2021 | 10 | 2021 |
| High current and linearity AlGaN/GaN/-graded-AlGaN: Si-doped/GaN heterostructure for low voltage power amplifier application Q Yu, C Shi, L Yang, H Lu, M Zhang, M Wu, B Hou, F Jia, F Guo, X Ma, ... IEEE Electron Device Letters 44 (4), 582-585, 2023 | 9 | 2023 |
| High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer M Jia, B Hou, L Yang, F Jia, X Niu, J Du, Q Chang, M Zhang, M Wu, ... IEEE Electron Device Letters, 2023 | 8 | 2023 |
| First demonstration of state-of-the-art GaN HEMTs for power and RF applications on a unified platform with free-standing GaN substrate and Fe/C co-doped buffer M Wu, M Zhang, L Yang, B Hou, Q Yu, S Li, C Shi, W Zhao, H Lu, W Chen, ... 2022 International Electron Devices Meeting (IEDM), 11.3. 1-11.3. 4, 2022 | 8 | 2022 |
| Low-resistance Ta/Al/Ni/Au ohmic contact and formation mechanism on AlN/GaN HEMT H Lu, B Hou, L Yang, F Song, M Zhang, M Wu, X Ma, Y Hao IEEE Transactions on Electron Devices 69 (11), 6023-6027, 2022 | 7 | 2022 |
| Improved breakdown voltage and low damage E-mode operation of AlON/AlN/GaN HEMTs using plasma oxidation treatment S Liu, J Zhu, J Guo, K Cheng, M Mi, L Qin, J Liu, F Jia, H Lu, X Ma, Y Hao IEEE Electron Device Letters 43 (10), 1621-1624, 2022 | 6 | 2022 |
| Investigation on the influence of ohmic structure on channel-to-channel coupling effect in InAlN/GaN double channel HEMTs L Yang, H Lu, M Zhang, X Niu, C Shi, B Hou, M Mi, M Wu, Q Zhu, Y Lu, ... IEEE Journal of the Electron Devices Society 10, 474-480, 2022 | 6 | 2022 |
| AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade H Lu, L Yang, B Hou, M Zhang, M Wu, XH Ma, Y Hao Applied Physics Letters 120 (17), 2022 | 6 | 2022 |
| Analytical model on the threshold voltage of p-channel heterostructure field-effect transistors on a GaN-based complementary circuit platform X Niu, B Hou, L Yang, M Zhang, X Zhang, H Lu, F Jia, J Du, M Wu, F Song, ... IEEE Transactions on Electron Devices 69 (1), 57-62, 2021 | 5 | 2021 |
| High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications C Shi, L Yang, M Zhang, M Wu, B Hou, H Lu, F Jia, F Guo, W Liu, Q Yu, ... IEEE Transactions on Electron Devices 70 (5), 2241-2246, 2023 | 4 | 2023 |
| Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact L Yang, H Lu, X Niu, M Zhang, C Shi, L Deng, B Hou, M Mi, M Wu, ... Journal of Applied Physics 132 (16), 2022 | 3 | 2022 |
| A Review of GaN RF Devices and Power Amplifiers for 5G Communication Applications H Lu, M Zhang, L Yang, B Hou, RP Martinez, M Mi, J Du, L Deng, M Wu, ... Fundamental Research, 2023 | 2 | 2023 |
| Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications M Zhang, Y Chen, S Guo, H Lu, Q Zhu, M Mi, M Wu, B Hou, L Yang, X Ma, ... Micromachines 14 (8), 1513, 2023 | 2 | 2023 |
| Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs H Lu, Z Si, B Hou, L Yang, X Ma, Y Hao 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs M Zhang, H Wang, L Yang, B Hou, M Wu, Q Zhu, M Mi, X Zou, C Shi, Q Yu, ... IEEE Journal of the Electron Devices Society, 2023 | 1 | 2023 |
| Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN: Fe Heterostucture L Yang, F Jia, H Lu, B Hou, M Zhang, J Du, Q Chang, L Deng, Q Yu, S Li, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 1 | 2023 |
Xiaohua MaXidian UniversityVerified email at xidian.edu.cn
