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Tetsuya Suemitsu
Tetsuya Suemitsu
Email verificata su tohoku.ac.jp
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An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii
IEEE Transactions on Electron Devices 45 (12), 2390-2399, 1998
1511998
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
Y Kurita, G Ducournau, D Coquillat, A Satou, K Kobayashi, ...
Applied Physics Letters 104 (25), 2014
1392014
30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs
T Suemitsu, H Yokoyama, T Ishii, T Enoki, G Meneghesso, E Zanoni
IEEE Transactions on Electron devices 49 (10), 1694-1700, 2002
1112002
Optical study of high-biased AlGaN/GaN high-electron-mobility transistors
N Shigekawa, K Shiojima, T Suemitsu
Journal of applied physics 92 (1), 531-535, 2002
982002
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
T Otsuji, YM Meziani, T Nishimura, T Suemitsu, W Knap, E Sano, T Asano, ...
Journal of Physics: Condensed Matter 20 (38), 384206, 2008
952008
High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology
T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii
IEEE Transactions on Electron Devices 46 (6), 1074-1080, 1999
881999
Improved recessed-gate structure for sub-0.1-µm-gate InP-based high electron mobility transistors
TST Suemitsu, TET Enoki, HYH Yokoyama, YIY Ishii
Japanese journal of applied physics 37 (3S), 1365, 1998
791998
30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency
TST Suemitsu, TIT Ishii, HYH Yokoyama, TET Enoki, YIY Ishii, ...
Japanese journal of applied physics 38 (2B), L154, 1999
781999
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors
N Shigekawa, K Shiojima, T Suemitsu
Applied Physics Letters 79 (8), 1196-1198, 2001
722001
Correlation between current–voltage characteristics and dislocations for n-GaN Schottky contacts
K Shiojima, T Suemitsu, M Ogura
Applied Physics Letters 78 (23), 3636-3638, 2001
582001
Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector
S Boubanga-Tombet, Y Tanimoto, A Satou, T Suemitsu, Y Wang, ...
Applied Physics Letters 104 (26), 2014
542014
Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures
T Otsuji, H Karasawa, T Watanabe, T Suemitsu, M Suemitsu, E Sano, ...
Comptes Rendus Physique 11 (7-8), 421-432, 2010
542010
Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications
H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ...
Journal of Materials Chemistry 21 (43), 17242-17248, 2011
502011
30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates
T Suemitsu, T Ishii, H Yokoyama, Y Umeda, T Enoki, Y Ishii, T Tamamura
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
461998
Room temperature logic inverter on epitaxial graphene-on-silicon device
A El Moutaouakil, HC Kang, H Handa, H Fukidome, T Suemitsu, E Sano, ...
Japanese journal of applied physics 50 (7R), 070113, 2011
412011
Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure
NM Shrestha, Y Li, T Suemitsu, S Samukawa
IEEE Transactions on Electron Devices 66 (4), 1694-1698, 2019
382019
Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on grown by metalorganic chemical …
K Shiojima, T Suemitsu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
362003
Epitaxial graphene top-gate FETs on silicon substrates
HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, T Suemitsu, ...
Solid-State Electronics 54 (10), 1071-1075, 2010
352010
An intrinsic delay extraction method for Schottky gate field effect transistors
T Suemitsu
IEEE electron device letters 25 (10), 669-671, 2004
332004
Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors
T Suemitsu, K Shiojima, T Makimura, N Shigekawa
Japanese journal of applied physics 44 (1L), L211, 2005
312005
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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