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Isabel Harrysson Rodrigues
Isabel Harrysson Rodrigues
Altri nomiHanna Isabel Harrysson Rodrigues, Isabel H. Rodrigues
NASA Jet Propulsion Laboratory
Email verificata su jpl.nasa.gov
Titolo
Citata da
Citata da
Anno
Origin and evolution of surface spin current in topological insulators
A Dankert, P Bhaskar, D Khokhriakov, IH Rodrigues, B Karpiak, ...
Physical Review B 97 (12), 125414, 2018
412018
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
IH Rodrigues, D Niepce, A Pourkabirian, G Moschetti, J Schleeh, T Bauch, ...
AIP Advances 9 (8), 2019
102019
Low-field mobility and high-field velocity of charge carriers in InGaAs/InP high-electron-mobility transistors
IH Rodrigues, A Vorobiev
IEEE Transactions on Electron Devices 69 (4), 1786-1791, 2022
92022
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
I Harrysson Rodrigues, A Generalov, A Md Hoque, M Soikkeli, A Murros, ...
Applied Physics Letters 121 (1), 2022
52022
Mobility and quasi-ballistic charge carrier transport in graphene field-effect transistors
I Harrysson Rodrigues, N Rorsman, A Vorobiev
Journal of Applied Physics 132 (24), 2022
22022
Publisher's Note:“Geometrical magnetoresistance effect and mobility in graphene field-effect transistors”[Appl. Phys. Lett. 121, 013502 (2022)]
IH Rodrigues, A Generalov, AM Hoque, M Soikkeli, A Murros, S Arpiainen, ...
Applied Physics Letters 121 (11), 2022
12022
InP High-electron-mobility Transistors
IH Rodrigues, A Vorobiev
Authorea Preprints, 2023
2023
Charge carrier transport in graphene field-effect transistor scaled down to submicron gate lengths
IH Rodrigues, A Vorobiev
2022 Compound Semiconductor Week (CSW), 1-2, 2022
2022
Study of Charge Carrier Transport in Field Effect Transistors: With Two Dimensional Electron Gas Using Geometrical Magnetoresistance Effect
IH Rodrigues
Chalmers University of Technology, 2022
2022
Study of charge carrier transport in field-effect transistors
IH RODRIGUES
2022
Charge Carrier Transport in Field-Effect Transistors with Two-Dimensional Electron Gas Using Geometrical Magnetoresistance Effect
IH Rodrigues
PQDT-Global, 2022
2022
Genomic Variations in Hydrogenophilus thermoluteolus Genomes Across a Small-Scale Hot Spring Soil Gradient and Global Geothermal Environments
I Rodrigues, Z Garvin, T Onstott
AGU Fall Meeting Abstracts 2021, B25K-1620, 2021
2021
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
IH Rodrigues, D Niepce, G Moschetti, A Pourkabirian, J Schleeh, T Bauch, ...
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019
Cryogenic InP High Electron Mobility Transistors in a Magnetic Field
IH Rodrigues
PQDT-Global, 2019
2019
Magnetic Influence on Cryogenic InP HEMT LNAs
IH Rodrigues, A Pourkabirian, G Moschetti, J Schleeh, PÅ Nilsson, ...
On the Angular Dependence of Cryogenic InP HEMTs in a Magnetic Field
IH Rodrigues, D Niepce, G Moschetti, A Pourkabirian, J Schleeh, T Bauch, ...
Evaluation and Study of Mobility in GFETs by geometrical magnetoresistance
IH Rodrigues, A Vorobiev, J Stake
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Articoli 1–17