Mathieu Luisier
Mathieu Luisier
Email verificata su iis.ee.ethz.ch
TitoloCitata daAnno
Sub-10 nm carbon nanotube transistor
AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
6002012
Atomistic simulation of nanowires in the s p 3 d 5 s* tight-binding formalism: From boundary conditions to strain calculations
M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B 74 (20), 205323, 2006
3822006
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
M Luisier, G Klimeck
Physical Review B 80 (15), 155430, 2009
2022009
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
M Luisier, G Klimeck
Journal of Applied Physics 107 (8), 084507, 2010
1652010
Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors
M Luisier, G Klimeck
IEEE Electron Device Letters 30 (6), 602-604, 2009
1522009
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 023707, 2010
1512010
Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations
A Kuzmin, M Luisier, O Schenk
European Conference on Parallel Processing, 533-544, 2013
1462013
Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism
M Luisier, A Schenk, W Fichtner
Journal of Applied physics 100 (4), 043713, 2006
1412006
Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures
M Luisier, G Klimeck
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
892009
Microscopic analysis of optical gain in quantum wells
B Witzigmann, V Laino, M Luisier, UT Schwarz, G Feicht, W Wegscheider, ...
Applied physics letters 88 (2), 021104, 2006
872006
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
M Luisier, G Klimeck
Applied Physics Letters 94 (22), 223505, 2009
852009
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ...
IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012
762012
Atomistic treatment of interface roughness in Si nanowire transistors with different channel orientations
M Luisier, A Schenk, W Fichtner
Applied Physics Letters 90 (10), 102103, 2007
742007
Soft surfaces of nanomaterials enable strong phonon interactions
D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ...
Nature 531, 618-622, 2016
672016
Ultimate device scaling: Intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length
M Luisier, M Lundstrom, DA Antoniadis, J Bokor
2011 International Electron Devices Meeting, 11.2. 1-11.2. 4, 2011
672011
Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors
S Agarwal, G Klimeck, M Luisier
IEEE Electron Device Letters 31 (6), 621-623, 2010
672010
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires
A Paul, M Luisier, G Klimeck
Journal of computational electronics 9 (3-4), 160-172, 2010
632010
Atomic Scale Plasmonic Switch
A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ...
Nano letters 16, 709-714, 2016
612016
Full three-dimensional quantum transport simulation of atomistic interface roughness in silicon nanowire FETs
SG Kim, M Luisier, A Paul, TB Boykin, G Klimeck
IEEE Transactions on Electron Devices 58 (5), 1371-1380, 2011
602011
Phonon-limited and effective low-field mobility in - and -type [100]-, [110]-, and [111]-oriented Si nanowire transistors
M Luisier
Applied Physics Letters 98 (3), 032111, 2011
572011
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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