| Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs J Suseendran, N Halder, S Chakrabarti, TD Mishima, CR Stanley Superlattices and Microstructures 46 (6), 900-906, 2009 | 31 | 2009 |
| Deposition of O atomic layers on Si (100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry S Jayachandran, A Delabie, A Billen, H Dekkers, B Douhard, T Conard, ... Applied Surface Science 324, 251-257, 2015 | 14 | 2015 |
| Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices S Jayachandran, A Delabie, J Maggen, M Caymax, R Loo, J Meersschaut, ... Thin Solid Films 557, 36-41, 2013 | 12 | 2013 |
| Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si (100) substrates A Delabie, S Jayachandran, M Caymax, R Loo, J Maggen, G Pourtois, ... ECS Solid State Letters 2 (11), P104, 2013 | 11 | 2013 |
| Low loss high refractive index niobium oxide waveguide platform for visible light applications K Lodewijks, S Jayachandran, TD Kongnyuy, S Lenci, S Das, ... Integrated Photonics Research, Silicon and Nanophotonics, ITh2B. 3, 2018 | 9 | 2018 |
| Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure S Jayachandran, A Billen, B Douhard, T Conard, J Meersschaut, ... Applied Surface Science 384, 152-160, 2016 | 7 | 2016 |
| Deep levels in silicon–oxygen superlattices E Simoen, S Jayachandran, A Delabie, M Caymax, M Heyns Semiconductor Science and Technology 31 (2), 025015, 2015 | 7 | 2015 |
| Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission NM Kolomiiets, VV Afanas' ev, S Jayachandran, A Delabie, M Heyns, ... ECS Journal of Solid State Science and Technology 5 (11), Q3008, 2016 | 5 | 2016 |
| Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE N Halder, J Suseendran, S Chakrabarti, M Herrera, M Bonds, ... Journal of Nanoscience and Nanotechnology 10 (8), 5202-5206, 2010 | 5 | 2010 |
| Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of InAs/GaAs quantum dot heterostructure grown by MBE J Suseendran, N Halder, S Chakrabarti, TD Mishima IOP Conference Series: Materials Science and Engineering 6 (1), 012006, 2009 | 5 | 2009 |
| Quasi Two-Dimensional Si-O Superlattices: Atomically Controlled Growth and Electrical Properties S Jayachandran, E Simoen, K Martens, J Meersschaut, H Bender, ... ECS Journal of Solid State Science and Technology 5 (7), P396, 2016 | 4 | 2016 |
| Nb2O5 as waveguide material for visible light photonic integrated circuits (Conference Presentation) S Jayachandran, S Lenci, K Lodewijks, TD Kongnyuy, K Leyssens, ... Nanophotonic Materials XV 10720, 1072009, 2018 | 1 | 2018 |
| A deep‐level transient spectroscopy study of p‐type silicon Schottky barriers containing a Si–O superlattice E Simoen, S Jayachandran, A Delabie, M Caymax, M Heyns physica status solidi (b) 254 (4), 1600593, 2017 | 1 | 2017 |
| Comparison between Si/SiO2 mid‐gap interface states and deep levels associated with silicon‐oxygen superlattices in p‐type silicon E Simoen, S Jayachandran, A Delabie, M Caymax, M Heyns physica status solidi (c) 13 (10‐12), 718-723, 2016 | 1 | 2016 |
| Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon E Simoen, S Jayachandran, A Delabie, M Caymax, M Heyns physica status solidi c 14 (12), 1700136, 2017 | | 2017 |
| A deep-level transient spectroscopy study of silicon Schottky barriers containing a Si-O superlattice E Simoen, S Jayachandran, A Delabie, M Caymax, M Heyns | | 2017 |
| Quasi 2D Si-O Superlattices for Future Nanoelectronic Applications S Jayachandran | | 2016 |
| Study of electrically active defects in epitaxial layers on silicon E Simoen, SK Dhayalan, S Jayachandran, S Gupta, F Gencarelli, ... 2016 China Semiconductor Technology International Conference (CSTIC), 1-3, 2016 | | 2016 |
| Quasi 2D epitaxial Si-O superlattices: growth, device performance and defect analysis S Jayachandran, K Martens, E Simoen, M Caymax, W Vandervorst, ... | | 2016 |
| Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics S Jayachandran, K Martens, A Lu, K Nishio, G Pourtois, A Delabie, ... Bulletin of the American Physical Society 60, 2015 | | 2015 |
Nilanjan HalderAssociate Professor, Department of Physics, Manipal University JaipurEmail verificata su jaipur.manipal.edu
