| Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications N Yun, J Lynch, W Sung Applied Physics Letters 114 (19), 2019 | 27 | 2019 |
| Area-efficient, 600V 4H-SiC JBS diode-integrated MOSFETs (JBSFETs) for power converter applications N Yun, J Lynch, W Sung IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 16-23, 2019 | 26 | 2019 |
| Developing 13-kV 4H-SiC MOSFETs: Significance of implant straggle, channel design, and MOS process on static performance N Yun, D Kim, J Lynch, AJ Morgan, W Sung, M Kang, A Agarwal, R Green, ... IEEE Transactions on Electron Devices 67 (10), 4346-4353, 2020 | 20 | 2020 |
| An inclusive structural analysis on the design of 1.2 kV 4H-SiC planar MOSFETs D Kim, SY Jang, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 9, 804-812, 2021 | 17 | 2021 |
| Design and fabrication approaches of 400–600 V 4H-SiC lateral MOSFETs for emerging power ICs application N Yun, W Sung IEEE Transactions on Electron Devices 67 (11), 5005-5011, 2020 | 17 | 2020 |
| Packaging of a 10-kV double-side cooled Silicon Carbide diode module with thin substrates coated by a nonlinear resistive polymer-nanoparticle composite Z Zhang, S Lu, B Wang, Y Zhang, N Yun, W Sung, KDT Ngo, GQ Lu IEEE Transactions on Power Electronics 37 (12), 14462-14470, 2022 | 16 | 2022 |
| Design considerations for high voltage SiC power devices: An experimental investigation into channel pinching of 10kV SiC junction barrier schottky (JBS) diodes J Lynch, N Yun, W Sung 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 15 | 2019 |
| Non-isothermal simulations to optimize SiC MOSFETs for enhanced short-circuit ruggedness D Kim, AJ Morgan, N Yun, W Sung, A Agarwal, R Kaplar 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 14 | 2020 |
| Packaging of a 15-kV silicon carbide MOSFET with insulation enhanced by a nonlinear resistive polymer-nanoparticle coating Z Zhang, S Lu, C Nicholas, N Yun, W Sung, KDT Ngo, GQ Lu 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-4, 2022 | 6 | 2022 |
| On the development of 1700V SiC JBS diodes in a 6-inch foundry N Yun, E Liu, WJ Sung, AS Larrea, D Franca, T Gorczyca, A Bialy, ... Materials Science Forum 963, 558-561, 2019 | 6 | 2019 |
| The Effect of Deep JFET and P-Well Implant of 1.2 kV 4H-SiC MOSFETs D Kim, N Yun, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 10, 989-995, 2022 | 5 | 2022 |
| Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation D Kim, N Yun, SY Jang, AJ Morgan, W Sung IEEE Journal of the Electron Devices Society 10, 495-503, 2022 | 4 | 2022 |
| Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs J Lynch, N Yun, AJ Morgan, W Sung, I Deckman, D Rossman, S Kim, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 4 | 2021 |
| Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process N Yun, J Lynch, WJ Sung Materials Science Forum 1004, 830-836, 2020 | 4 | 2020 |
| Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study D Kim, N Yun, W Sung 2021 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2021 | 3 | 2021 |
| Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs D Kim, S DeBoer, SA Mancini, SB Isukapati, J Lynch, N Yun, AJ Morgan, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 2 | 2023 |
| A new junction barrier Schottky diode using a novel lateral architecture on a 4H-SiC substrate J Lynch, N Yun, W Sung 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 2 | 2019 |
| Packaging of 20 kV Double-Side Cooled Silicon Carbide Diode Module With Electrical Insulation Enhanced by a Polymer-Nanoparticle Coating Z Zhang, C Nicholas, A Emmanuel, KDT Ngo, GQ Lu, J Lynch, N Yun, ... 2023 25th European Conference on Power Electronics and Applications (EPE'23 …, 2023 | 1 | 2023 |
| Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices N Yun, W Sung IEEE Transactions on Electron Devices 69 (7), 3826-3832, 2022 | 1 | 2022 |
| Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry N Yun, J Lynch, S DeBoer, AJ Morgan, W Sung, D Xing, M Kang, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 1 | 2021 |
