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Eric Carlson
Eric Carlson
Booz Allen Hamilton
Verified email at mindspring.com
Title
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Cited by
Year
Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
4232001
GaN thin films deposited via organometallic vapor phase epitaxy on A (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers
TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
Applied physics letters 67 (3), 401-403, 1995
3101995
Pendeoepitaxy of gallium nitride thin films
K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied Physics Letters 75 (2), 196-198, 1999
2611999
Cosmic ray protons in the inner galaxy and the galactic center gamma-ray excess
E Carlson, S Profumo
Physical Review D 90 (2), 023015, 2014
2052014
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon
JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas
US Patent 6,692,568, 2004
1902004
Ion implantation into gallium nitride
C Ronning, EP Carlson, RF Davis
Physics Reports 351 (5), 349-385, 2001
1802001
Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures
TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ...
MRS Online Proceedings Library (OPL) 537, G3. 38, 1998
1621998
MIIIN based materials and methods and apparatus for producing same
JJ Cuomo, NM Williams, AD Hanser, EP Carlson, DT Thomas
US Patent 6,784,085, 2004
922004
Antihelium from dark matter
E Carlson, A Coogan, T Linden, S Profumo, A Ibarra, S Wild
Physical Review D 89 (7), 076005, 2014
902014
Optical activation of Be implanted into GaN
C Ronning, EP Carlson, DB Thomson, RF Davis
Applied Physics Letters 73 (12), 1622-1624, 1998
771998
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α (6H)–SiC (0001) substrates via organometallic vapor …
TW Weeks, MD Bremser, KS Ailey, E Carlson, WG Perry, EL Piner, ...
Journal of materials research 11 (4), 1011-1018, 1996
641996
Amorphous boron coatings produced with vacuum arc deposition technology
CC Klepper, RC Hazelton, EJ Yadlowsky, EP Carlson, MD Keitz, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002
602002
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride …
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,376,339, 2002
552002
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques
KJ Linthicum, T Gehrke, DB Thomson, KM Tracy, EP Carlson, TP Smith, ...
MRS Online Proceedings Library (OPL) 537, G4. 9, 1998
501998
X-ray photoelectron spectroscopy analysis of GaN/(0001) AlN and AlN/(0001) GaN growth mechanisms
SW King, EP Carlson, RJ Therrien, JA Christman, RJ Nemanich, RF Davis
Journal of applied physics 86 (10), 5584-5593, 1999
471999
Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ...
physica status solidi (b) 254 (8), 1600774, 2017
442017
Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors
IC Kizilyalli, YA Xu, E Carlson, J Manser, DW Cunningham
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
422017
Ion implantation of epitaxial GaN films: damage, doping and activation
N Parikh, A Suvkhanov, M Lioubtchenko, E Carlson, M Bremser, D Bray, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997
421997
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,462,355, 2002
402002
X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy
M Park, JP Maria, JJ Cuomo, YC Chang, JF Muth, RM Kolbas, ...
Applied physics letters 81 (10), 1797-1799, 2002
392002
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