Guest Editorial: The dawn of gallium oxide microelectronics M Higashiwaki, GH Jessen
Applied Physics Letters 112 (6), 2018
613 2018 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped2 O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
584 2016 Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices GH Jessen, RC Fitch, JK Gillespie, G Via, A Crespo, D Langley, ...
IEEE Transactions on Electron Devices 54 (10), 2589-2597, 2007
399 2007 Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
374 2016 Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
356 2018 AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
302 2017 Dominant effect of near-interface native point defects on ZnO Schottky barriers LJ Brillson, HL Mosbacker, MJ Hetzer, Y Strzhemechny, GH Jessen, ...
Applied Physics Letters 90 (10), 2007
276 2007 Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
258 2018 Recessed-Gate Enhancement-Mode KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
222 2017 Ge-Doped N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
197 2017 Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson
Applied Physics Letters 79 (19), 3056-3058, 2001
192 2001 Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 2017
179 2017 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier A Crespo, MM Bellot, KD Chabak, JK Gillespie, GH Jessen, V Miller, ...
IEEE Electron Device Letters 31 (1), 2-4, 2009
122 2009 Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2 O3 and its Effect on Power Devices AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen
Scientific reports 7 (1), 13218, 2017
117 2017 Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ...
IEEE electron device letters 31 (2), 99-101, 2009
96 2009 High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 2017
90 2017 Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 2005
84 2005 ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
77 2019 Implementation of High-Power-Density RC Fitch, DE Walker, AJ Green, SE Tetlak, JK Gillespie, RD Gilbert, ...
IEEE electron device letters 36 (10), 1004-1007, 2015
68 2015 