Gao, Li
Gao, Li
Seagate Technology
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Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy
NB Aetukuri, AX Gray, M Drouard, M Cossale, L Gao, AH Reid, R Kukreja, ...
Nature Physics 9 (10), 661, 2013
4082013
Design Scheme of New Tetragonal Heusler Compounds for Spin‐Transfer Torque Applications and its Experimental Realization
J Winterlik, S Chadov, A Gupta, V Alijani, T Gasi, K Filsinger, B Balke, ...
Advanced Materials 24, 6283, 2012
1852012
High Density Heat-Assisted Magnetic Recording Media and Advanced Characterization—Progress and Challenges
G Ju, Y Peng, EKC Chang, Y Ding, AQ Wu, X Zhu, Y Kubota, TJ Klemmer, ...
IEEE Transactions on Magnetics 51 (11), 1-9, 2015
1392015
Bias Voltage Dependence of Tunneling Anisotropic Magnetoresistance in Magnetic Tunnel Junctions with MgO and Al2O3 Tunnel Barriers
L Gao, X Jiang, SH Yang, JD Burton, EY Tsymbal, SSP Parkin
Physical review letters 99 (22), 226602, 2007
1152007
Temperature dependence of current-induced magnetization switching in spin valves with a ferrimagnetic CoGd free layer
X Jiang, L Gao, JZ Sun, SSP Parkin
Physical review letters 97 (21), 217202, 2006
832006
Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
JS Brockman, L Gao, B Hughes, CT Rettner, MG Samant, KP Roche, ...
Nature nanotechnology 9 (6), 453-458, 2014
802014
High field-gradient dysprosium tips for magnetic resonance force microscopy
HJ Mamin, CT Rettner, MH Sherwood, L Gao, D Rugar
Applied Physics Letters 100 (1), 013102, 2012
512012
CoFe alloy as middle layer for strong spin dependent quantum well resonant tunneling in MgO double barrier magnetic tunnel junctions
RS Liu, SH Yang, X Jiang, XG Zhang, C Rettner, L Gao, T Topuria, ...
Physical Review B 87 (2), 024411, 2013
322013
Thermal-magnetic noise measurement of spin-torque effects on ferromagnetic resonance in MgO-based magnetic tunnel junctions
Y Guan, JZ Sun, X Jiang, R Moriya, L Gao, SSP Parkin
Applied Physics Letters 95 (8), 082506, 2009
232009
Increased Tunneling Magnetoresistance Using Normally bcc CoFe Alloy Electrodes Made Amorphous without Glass Forming Additives
L Gao, X Jiang, SH Yang, PM Rice, T Topuria, SSP Parkin
Physical review letters 102 (24), 247205, 2009
192009
Heat-Assisted Magnetic Recording's Extensibility to High Linear and Areal Density
Y Kubota, Y Peng, Y Ding, EKC Chang, L Gao, F Zavaliche, TJ Klemmer, ...
IEEE Transactions on Magnetics, 1-6, 2018
172018
Magnetic properties of Fe-Mn-Pt for heat assisted magnetic recording applications
J Park, YK Hong, SG Kim, L Gao, JU Thiele
Journal of Applied Physics 117 (5), 053911, 2015
112015
Electronic and crystalline structures of zero band-gap LuPdBi thin films grown epitaxially on MgO (100)
R Shan, S Ouardi, GH Fecher, L Gao, A Kellock, KP Roche, MG Samant, ...
Applied Physics Letters 102 (17), 172401, 2013
112013
A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO (100)
R Shan, S Ouardi, GH Fecher, L Gao, A Kellock, A Gloskovskii, ...
Applied Physics Letters 101 (21), 212102, 2012
112012
Enhanced tunneling spin polarization from ultrathin layers of amorphous CoFe
L Gao, X Jiang, PM Rice, SSP Parkin
Applied Physics Letters 95 (12), 122503, 2009
62009
Magnetic stack including MgO-Ti (ON) interlayer
Y Kubota, TJ Klemmer, KC Chang, L Gao, Y Ding, Y Peng, JU Thiele
US Patent 9,672,854, 2017
52017
Low Power Thermally Assisted Data Recording Media
JU Thiele, Y Ding, Y Peng, KC Chang, TJ Klemmer, L Gao, Y Kubota, ...
US Patent App. 14/839,441, 2015
52015
Apparatus including temperature-dependent exchange spring mechanism
X Chen, G Ju, Y Peng, TJ Klemmer, Y Kubota, JU Thiele, DS Kuo, ...
US Patent 9,349,402, 2016
42016
Composite magnetic recording structure for heat assisted magnetic recording device
X Chen, G Ju, Y Peng, TJ Klemmer, Y Kubota, JU Thiele, DS Kuo, ...
US Patent 8,988,976, 2015
42015
Method for fabricating a patterned composite structure
X Chen, G Ju, Y Peng, TJ Klemmer, YA Kubota, JU Thiele, DS Kuo, ...
US Patent App. 14/055,775, 2013
32013
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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