Max C. Lemme
Max C. Lemme
Professor, RWTH Aachen University, Germany, Director, AMO GmbH
Email verificata su rwth-aachen.de - Home page
TitoloCitata daAnno
A graphene field-effect device
MC Lemme, TJ Echtermeyer, M Baus, H Kurz
IEEE Electron Device Letters 28 (4), 282-284, 2007
11272007
Precision cutting and patterning of graphene with helium ions
DC Bell, MC Lemme, LA Stern, JR Williams, CM Marcus
Nanotechnology 20 (45), 455301, 2009
3712009
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer, M Liebmann, T Echtermeyer, S Runte, M Schmidt, ...
Physical review letters 102 (7), 076102, 2009
3702009
Gate-activated photoresponse in a graphene p–n junction
MC Lemme, FHL Koppens, AL Falk, MS Rudner, H Park, LS Levitov, ...
Nano letters 11 (10), 4134-4137, 2011
3542011
Efficient inkjet printing of graphene
J Li, F Ye, S Vaziri, M Muhammed, MC Lemme, M Ístling
Advanced materials 25 (29), 3985-3992, 2013
3142013
Etching of graphene devices with a helium ion beam
MC Lemme, DC Bell, JR Williams, LA Stern, BWH Baugher, ...
ACS nano 3 (9), 2674-2676, 2009
3072009
Electromechanical piezoresistive sensing in suspended graphene membranes
AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ...
Nano letters 13 (7), 3237-3242, 2013
2542013
A graphene-based hot electron transistor
S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
2022013
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
G Lupina, J Kitzmann, I Costina, M Lukosius, C Wenger, A Wolff, S Vaziri, ...
ACS Nano 9 (5), 4776–4785, 2015
1872015
Non-volatile switching in graphene field effect devices
TJ Echtermeyer, MC Lemme, M Baus, BN Szafranek, AK Geim, H Kurz
IEEE Electron Device Letters 29 (8), 952-954, 2008
1832008
Vertical graphene base transistor
W Mehr, JC Scheytt, J Dabrowski, G Lippert, YH Xie, MC Lemme, ...
IEEE Electron Device Letters 33 (5), 691-693, 2012
1492012
Resistive graphene humidity sensors with rapid and direct electrical readout
AD Smith, K Elgammal, F Niklaus, A Delin, AC Fischer, S Vaziri, ...
Nanoscale 7 (45), 19099-19109, 2015
1432015
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engstr÷m, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
1372007
Mobility in graphene double gate field effect transistors
MC Lemme, TJ Echtermeyer, M Baus, BN Szafranek, J Bolten, M Schmidt, ...
Solid-State Electronics 52 (4), 514-518, 2008
1262008
Graphene-enabled wireless communication for massive multicore architectures
S Abadal, E Alarcˇn, A Cabellos-Aparicio, MC Lemme, M Nemirovsky
IEEE Communications Magazine 51 (11), 137-143, 2013
1202013
Inkjet Printing of MoS2
J Li, MM Naiini, S Vaziri, MC Lemme, M Ístling
Advanced Functional Materials 24 (41), 6524-6531, 2014
1172014
High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature
C Yim, K Lee, N McEvoy, M O'Brien, S Riazimehr, NC Berner, CP Cullen, ...
ACS Nano 10 (10), 9550–9558, 2016
1142016
Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide
T Mashoff, M Pratzer, V Geringer, TJ Echtermeyer, MC Lemme, ...
Nano letters 10 (2), 461-465, 2010
1112010
Current status of graphene transistors
MC Lemme
Solid State Phenomena 156, 499-509, 2010
882010
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
842019
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
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