Ji-Hui Yang
TitoloCitata daAnno
Halide perovskite materials for solar cells: a theoretical review
WJ Yin, JH Yang, J Kang, Y Yan, SH Wei
Journal of Materials Chemistry A 3 (17), 8926-8942, 2015
6972015
Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu 2 ZnSnS 4
S Chen, JH Yang, XG Gong, A Walsh, SH Wei
Physical Review B 81 (24), 245204, 2010
6182010
Compositional dependence of structural and electronic properties of Cu 2 ZnSn (S, Se) 4 alloys for thin film solar cells
S Chen, A Walsh, JH Yang, XG Gong, L Sun, PX Yang, JH Chu, SH Wei
Physical Review B 83 (12), 125201, 2011
3912011
Wurtzite-derived polytypes of kesterite and stannite quaternary chalcogenide semiconductors
S Chen, A Walsh, Y Luo, JH Yang, XG Gong, SH Wei
Physical Review B 82 (19), 195203, 2010
2472010
Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation
XG Zhao, JH Yang, Y Fu, D Yang, Q Xu, L Yu, SH Wei, L Zhang
Journal of the American Chemical Society 139 (7), 2630-2638, 2017
2402017
Effective band gap narrowing of anatase TiO2 by strain along a soft crystal direction
WJ Yin, S Chen, JH Yang, XG Gong, Y Yan, SH Wei
Applied Physics Letters 96 (22), 221901, 2010
2032010
Predicting two-dimensional boron–carbon compounds by the global optimization method
X Luo, J Yang, H Liu, X Wu, Y Wang, Y Ma, SH Wei, X Gong, H Xiang
Journal of the American Chemical Society 133 (40), 16285-16290, 2011
1782011
Structural diversity and electronic properties of Cu 2 Sn X 3 (X= S, Se): A first-principles investigation
YT Zhai, S Chen, JH Yang, HJ Xiang, XG Gong, A Walsh, J Kang, SH Wei
Physical Review B 84 (7), 075213, 2011
1562011
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
YH Li, A Walsh, S Chen, WJ Yin, JH Yang, J Li, JLF Da Silva, XG Gong, ...
Applied Physics Letters 94 (21), 212109, 2009
1502009
First-principles study on the electronic and optical properties of cubic ABX 3 halide perovskites
L Lang, JH Yang, HR Liu, HJ Xiang, XG Gong
Physics Letters A 378 (3), 290-293, 2014
1442014
Strong Dzyaloshinskii-Moriya Interaction and Origin of Ferroelectricity in Cu 2 OSeO 3
JH Yang, ZL Li, XZ Lu, MH Whangbo, SH Wei, XG Gong, HJ Xiang
Physical review letters 109 (10), 107203, 2012
1052012
Origin of the superior conductivity of perovskite Ba (Sr) SnO3
HR Liu, JH Yang, HJ Xiang, XG Gong, SH Wei
Applied Physics Letters 102 (11), 112109, 2013
902013
Design of I2–II–IV–VI4 Semiconductors through Element Substitution: The Thermodynamic Stability Limit and Chemical Trend
C Wang, S Chen, JH Yang, L Lang, HJ Xiang, XG Gong, A Walsh, SH Wei
Chemistry of Materials 26 (11), 3411-3417, 2014
862014
Two-Dimensional SiS Layers with Promising Electronic and Optoelectronic Properties: Theoretical Prediction
JH Yang, Y Zhang, WJ Yin, XG Gong, BI Yakobson, SH Wei
Nano letters 16 (2), 1110-1117, 2016
752016
Cu 2 Zn (Sn, Ge) Se 4 and Cu 2 Zn (Sn, Si) Se 4 alloys as photovoltaic materials: Structural and electronic properties
Q Shu, JH Yang, S Chen, B Huang, H Xiang, XG Gong, SH Wei
Physical Review B 87 (11), 115208, 2013
682013
Review on first-principles study of defect properties of CdTe as a solar cell absorber
JH Yang, WJ Yin, JS Park, J Ma, SH Wei
Semiconductor Science and Technology 31 (8), 083002, 2016
592016
Electronic structure and phase stability of MgTe, ZnTe, CdTe, and their alloys in the B3, B4, and B8 structures
JH Yang, S Chen, WJ Yin, XG Gong, A Walsh, SH Wei
Physical Review B 79 (24), 245202, 2009
582009
Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
JH Yang, WJ Yin, JS Park, J Burst, WK Metzger, T Gessert, T Barnes, ...
Journal of Applied Physics 118 (2), 025102, 2015
442015
First-principles study of H+ intercalation in layer-structured LiCoO2
X Gu, J Liu, J Yang, H Xiang, X Gong, Y Xia
The Journal of Physical Chemistry C 115 (25), 12672-12676, 2011
442011
Non-radiative carrier recombination enhanced by two-level process: a first-principles study
JH Yang, L Shi, LW Wang, SH Wei
Scientific reports 6, 21712, 2016
362016
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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