Changyi Li
Changyi Li
Center for High Technology Materials, The University of New Mexico
Email verificata su unm.edu
Titolo
Citata da
Citata da
Anno
Nonpolar InGaN/GaN core–shell single nanowire lasers
C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung, WW Chow, I Brener, ...
Nano letters 17 (2), 1049-1055, 2017
892017
Intrinsic polarization control in rectangular GaN nanowire lasers
C Li, S Liu, TS Luk, JJ Figiel, I Brener, SRJ Brueck, GT Wang
Nanoscale 8 (10), 5682-5687, 2016
292016
Polarization control in GaN nanowire lasers
H Xu, A Hurtado, JB Wright, C Li, S Liu, JJ Figiel, TS Luk, SRJ Brueck, ...
Optics express 22 (16), 19198-19203, 2014
212014
Ultrafast carrier capture and auger recombination in single GaN/InGaN multiple quantum well nanowires
S Boubanga-Tombet, JB Wright, P Lu, MRC Williams, C Li, GT Wang, ...
ACS Photonics 3 (12), 2237-2242, 2016
202016
Annular-shaped emission from gallium nitride nanotube lasers
C Li, S Liu, A Hurtado, JB Wright, H Xu, TS Luk, JJ Figiel, I Brener, ...
ACS Photonics 2 (8), 1025-1029, 2015
202015
Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure
S Liu, C Li, JJ Figiel, SRJ Brueck, I Brener, GT Wang
Nanoscale 7 (21), 9581-9588, 2015
202015
Monolithically-integrated, polarization-independent circulator
M Sodagar, W Wang, C Li, G Li, M Askari, Y Wang
US Patent App. 15/656,331, 2018
32018
VB 语言环境下基于串口通信的光纤光栅传感网络分析软件的设计
李长义, 陈海清, 黄翀, 潘杰麟
应用光学 31 (006), 1005-1008, 2010
32010
Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.
B Leung, MC Tsai, G Balakrishnan, C Li, SRJ Brueck, JJ Figiel, P Lu, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
22016
Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.
B Leung, MC Tsai, C Li, G Balakrishnan, GT Wang
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
12016
Gallium nitride nanotube lasers
C Li, A Hurtado, JB Wright, H Xu, S Liu, TS Luk, I Brener, SRJ Brueck, ...
CLEO: Science and Innovations, SW1G. 3, 2014
12014
Nonpolar InGaN/GaN Core-Shell Nanowire Lasers: Fabrication Properties and Contact-Dependent Thresholds.
GT Wang, C Li, S Liu, JB Wright, B Leung, JJ Figiel, WW Chow, TS Luk, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2019
2019
Top-Down Etching of Three-Dimensional High Aspect Ratio GaN Nanostructures.
GT Wang, B Leung, MC Tsai, C Li, G Balakrishnan
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
2017
Ultrafast carrier capture and Auger recombination in individual III-nitride nanowires (Conference Presentation)
SAB Tombet, JB Wright, P Lu, MRC Williams, C Li, GT Wang, ...
Active Photonic Platforms IX 10345, 1034505, 2017
2017
Top-down fabrication for III-nitride nanophotonics
GT Wang, B Leung, C Li, MC Tsai, S Liu, JB Wright, DD Koleske, P Lu, ...
2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 85-86, 2017
2017
Nanowires Nanosheets and Beyond: Three-Dimensional High Aspect Ratio Nanostructures by Top-Down Etching of GaN
B Leung, MC Tsai, C Li, G Balakrishnan, GT Wang
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2017
2017
Top-Down Etching of GaN Nanostructures for Optoelectronics and Beyond
GT Wang, B Leung, MC Tsai, C Li, G Balakrishnan
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
2017
Top-Down Etching of Three-Dimensional High Aspect Ratio GaN Nanostructures
B Leung, MC Tsai, C Li, G Balakrishnan, GT Wang
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2017
2017
Top-Down Fabricated III-Nitride Nanowire Photonics
GT Wang, C Li, B Leung, S Liu, JB Wright, MC Tsai, D Koleske, P Lu, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2017
2017
Nanowires Nanosheets and Beyond-Geometry Controlled High Aspect Ratio Nanostructures by Top-Down Fabrication.
B Leung, MC Tsai, C Li, JJ Figiel, P Lu, G Balakrishnan, SRJ Brueck, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2016
2016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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