Viet-Hung Nguyen
Viet-Hung Nguyen
Université catholique de Louvain, Louvain-la-Neuve, Belgium
Email verificata su uclouvain.be - Home page
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Citata da
Citata da
Anno
Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
F Mazzamuto, VH Nguyen, Y Apertet, C Caër, C Chassat, J Saint-Martin, ...
Physical Review B 83 (23), 235426, 2011
1512011
Thermoelectric effects in graphene nanostructures
P Dollfus, VH Nguyen, J Saint-Martin
Journal of Physics: Condensed Matter 27 (13), 133204, 2015
1022015
Electronic transport and spin-polarization effects of relativisticlike particles in mesoscopic graphene structures
V Nam Do, VH Nguyen, P Dollfus, A Bournel
Journal of Applied Physics 104 (6), 063708, 2008
852008
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano Letters 14 (4), 2094–2098, 2014
752014
Resonant tunnelling diodes based on graphene/h-BN heterostructure
VH Nguyen, F Mazzamuto, A Bournel, P Dollfus
Journal of Physics D: Applied Physics 45 (32), 325104, 2012
752012
Controllable spin-dependent transport in armchair graphene nanoribbon structures
VH Nguyen, V Nam Do, A Bournel, VL Nguyen, P Dollfus
Journal of Applied Physics 106 (5), 053710, 2009
662009
Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
YM Niquet, VH Nguyen, F Triozon, I Duchemin, O Nier, D Rideau
Journal of Applied Physics 115 (5), 054512, 2014
502014
Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect
VH Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Nanotechnology 23 (6), 065201, 2012
482012
Graphene nanomesh transistor with high on/off ratio and good saturation behavior
S Berrada, V Hung Nguyen, D Querlioz, J Saint-Martin, A Alarcón, ...
Applied Physics Letters 103 (18), 183509, 2013
472013
A Klein-tunneling transistor with ballistic graphene
Q Wilmart, S Berada, D Torrin, VH Nguyen, G Feve, JM Berroir, P Dollfus, ...
2D Materials 1 (1), 011006, 2014
402014
Thermoelectric performance of disordered and nanostructured graphene ribbons using Green’s function method
F Mazzamuto, J Saint-Martin, VH Nguyen, C Chassat, P Dollfus
Journal of Computational Electronics 11 (1), 67-77, 2012
402012
Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions
V Hung Nguyen, F Mazzamuto, J Saint-Martin, A Bournel, P Dollfus
Applied Physics Letters 99 (4), 042105, 2011
392011
Scaling of Ω-gate SOI nanowire n-and p-FET down to 10nm gate length: Size-and orientation-dependent strain effects
S Barraud, R Coquand, V Maffini-Alvaro, MP Samson, JM Hartmann, ...
Symposium on VLSI Technology (VLSIT), 2013, T230-T231, 2013
37*2013
Enhanced thermoelectric figure of merit in vertical graphene junctions
V Hung Nguyen, MC Nguyen, HV Nguyen, J Saint-Martin, P Dollfus
Applied Physics Letters 105 (13), 133105, 2014
332014
Resonant tunneling structures based on epitaxial graphene on SiC
VH Nguyen, A Bournel, P Dollfus
Semiconductor science and technology 26 (12), 125012, 2011
322011
Pseudosaturation and negative differential conductance in graphene field-effect transistors
A Alarcón, VH Nguyen, S Berrada, D Querlioz, J Saint-Martin, A Bournel, ...
IEEE Transactions on Electron Devices 60 (3), 985-991, 2013
312013
Disorder effects on electronic bandgap and transport in graphene-nanomesh-based structures
V Hung Nguyen, M Chung Nguyen, HV Nguyen, P Dollfus
Journal of Applied Physics 113 (1), 013702, 2013
312013
Resonant tunneling and negative transconductance in single barrier bilayer graphene structure
VH Nguyen, A Bournel, VL Nguyen, P Dollfus
Applied Physics Letters 95 (23), 232115, 2009
312009
Valley filtering and electronic optics using polycrystalline graphene
VH Nguyen, S Dechamps, P Dollfus, JC Charlier
Physical Review Letters 117 (24), 247702, 2016
292016
Large peak-to-valley ratio of negative-differential-conductance in graphene pn junctions
V Hung Nguyen, A Bournel, P Dollfus
Journal of Applied Physics 109 (9), 093706, 2011
292011
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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